Abstract: A bias voltage circuit with ultra low output impedance. The circuit incorporates feedback to reduce the output impedance at both low and RF frequencies. The bias circuit outputs a bias signal for biasing an amplifier. The bias circuit includes an input stage that receives an input signal and produces the bias signal at an output terminal that is coupled to a gain stage. The bias circuit also includes a load coupled to the input stage at a first terminal, and a feedback circuit coupled between the first terminal and the gain stage.

Abstract: Continuous variable-gain low-noise amplifier. The amplifier continuously adjusts its gain between well-defined high and low values by using a cascode current-steering circuit to partition signal current between two different nodes of an output loading network. A shunt feedback network connected from an intermediate node of the loading network to the input provides negative feedback that linearizes the amplifier as its gain is decreased. The circuit degrades the noise figure at lower gains by varying the gain without directly dumping the signal current to the power supply. The circuit produces only small changes in input and output impedances and preserves an improved reverse-isolation cascode characteristic as the gain is controlled.

Abstract: Continuous variable-gain low-noise amplifier. The amplifier continuously adjusts its gain between well-defined high and low values by using a cascode current-steering circuit to partition signal current between two different nodes of an output loading network. A shunt feedback network connected from an intermediate node of the loading network to the input provides negative feedback that linearizes the amplifier as its gain is decreased. The circuit degrades the noise figure at lower gains considerably less than conventional circuits by varying the gain without directly dumping the signal current to the power supply. The circuit produces only small changes in input and output impedances and preserves an improved reverse-isolation cascode characteristic as the gain is controlled.

Abstract: A variable-gain BiCMOS transconductance amplifier (VGA). An NMOS differential pair amplifier with bipolar cascoding provides continuous gain control by adjustment of drain-source voltage to shift the NMOS differential pair from a saturation region operation and high gain to a triode operation and low gain. A simple control circuit is used in order to generate the desired exponential gain to linear control voltage characteristic that is stable over temperature and process. The shift from saturation to triode operation of the input NMOS differential pair simultaneously increases the input linearity as the gain is reduced.

Abstract: A variable-gain BiCMOS transconductance amplifier (VGA). An NMOS differential pair amplifier with bipolar cascoding provides continuous gain control by adjustment of drain-source voltage to shift the NMOS differential pair from a saturation region operation and high gain to a triode operation and low gain. A simple control circuit is used in order to generate the desired exponential gain to linear control voltage characteristic that is stable over temperature and process. The shift from saturation to triode operation of the input NMOS differential pair simultaneously increases the input linearity as the gain is reduced.

Abstract: Continuous variable-gain low-noise amplifier. The amplifier continuously adjusts its gain between well-defined high and low values by using a cascode current-steering circuit to partition signal current between two different nodes of an output loading network. A shunt feedback network connected from an intermediate node of the loading network to the input provides negative feedback that linearizes the amplifier as its gain is decreased. The circuit degrades the noise figure at lower gains by varying the gain without directly dumping the signal current to the power supply. The circuit produces only small changes in input and output impedances and preserves an improved reverse- isolation cascode characteristic as the gain is controlled.

Abstract: A bipolar transistor includes a passivating layer of material 40 in the base structure 42 that serves to cover the extrinsic base region of the transistor. The passivating layer 40 is formed of a material having a wider bandgap than the base layer 44, and is heavily doped with the same doping type (n or p) as the base layer. The invention is advantageous in that the base contacts 48 of the device are made directly to the passivating layer 40 and are not in direct contact with the base layer 44. This eliminates the need for alloyed contacts and the concomitant reliability problems associated with spiking contacts. In addition, the invention is completely compatible with self-aligned production techniques.

Abstract: The input AGC and reference (REF) voltages are converted to currents and provided as differential inputs to a current amplifier. The current amplifier scales these currents proportional to absolute temperature. The translinear principle is used to realize the current amplifier and ensures linearity of the differential output currents. These currents are then converted to voltages by resistor elements. The result is applied to a simple differential pair that produces two AGC control currents that follow the hyperbolic tangent function. The two AGC control currents are equal when the AGC input is three-fourths the reference value. The overall gain response is well modeled by a second order function and is self-limiting at high gain values.

Abstract: A bipolar transistor includes a passivating layer of material 40 in the base structure 42 that serves to cover the extrinsic base region of the transistor. The passivating layer 40 is formed of a material having a wider bandgap than the base layer 44, and is heavily doped with the same doping type (n or p) as the base layer. The invention is advantageous in that the base contacts 48 of the device are made directly to the passivating layer 40 and are not in direct contact with the base layer 44. This eliminates the need for alloyed contacts and the concomitant reliability problems associated with spiking contacts. In addition, the invention is completely compatible with self-aligned production techniques.