Abstract: Dynamic link preview generation techniques are described that overcome the challenges of conventional techniques by supporting link preview generation by a content provider system that proves the digital content via a respective network address. In one example, a content provider system, based on a request received from a service provider system, identifies a communication platform of the service provider system that is to be used to communicate the shared link. Upon identifying the communication platform, the content provider system locates customization data that describes how the link preview is to be generated for the communication platform. In response, the content provider system renders digital content available via the network address to generate the link preview.

Abstract: Nucleation of a refractory metal such as tungsten is initiated on a substrate of TiN without the use of silane by introducing hydrogen into a CVD reactor before the introduction of the reactant gas containing the metal, brought to reaction temperature and to reaction pressure. The process is most useful for CVD of tungsten onto patterned TiN coated silicon semiconductor wafers. Alternatively, hydrogen is introduced in a mixture with the metal containing gas, such as WF.sub.6, and maintained at subreaction pressure, of for example 100 mTorr, until the substrate is stabilized at a reaction temperature of approximately 400.degree. C. or higher, to cause the dissociation of hydrogen on the wafer surface, then elevated to a relatively high reaction pressure of, for example, 60 Torr at which nucleation is achieved. Also, the reduction reaction that deposits the tungsten film proceeds without the need for a two step nucleation-deposition process.