Abstract: Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Abstract: Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale polymeric microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Abstract: Methods for fabricating sublithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multilayer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in one-dimensional arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Methods of modifying block copolymers to enhance thermodynamic properties thereof without sacrificing material properties and methods of forming modified block copolymers having desired properties are disclosed. The modified block copolymers may be used, for example, as a mask for sublithographic patterning during various stages of semiconductor device fabrication. For example, block copolymers having desirable material properties, such as etch selectively, may be chemically modified to tailor a ? value thereof to optimize the process conditions for achieving a self-assembled state and to reduce a defectivity of the self-assembled block copolymer pattern.

Abstract: Methods for fabricating sublithographic, nanoscale polymeric microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in one-dimensional arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. The metal oxide structures and patterns may be used, for example, as a mask for sublithographic patterning during various stages of semiconductor device fabrication. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface.

Abstract: Methods for fabricating sublithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multilayer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation.