Patents by Inventor Dan Namishia

Dan Namishia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Devices including ultra-short gates and methods of forming same
    Patent number: 9530647
    Abstract: Provided are devices including ultra-short gates and methods of forming same. Methods include forming a first gate pattern on a semiconductor that includes a first recess having a first width. A dielectric spacer is formed on a sidewall of the first recess to define a second recess in the first recess that has a second width that is smaller than the first width. A gate having the second width is formed in the second recess.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: December 27, 2016
    Assignee: Cree, Inc.
    Inventors: Zoltan Ring, Dan Namishia
  • DEVICES INCLUDING ULTRA-SHORT GATES AND METHODS OF FORMING SAME
    Publication number: 20150084116
    Abstract: Provided are devices including ultra-short gates and methods of forming same. Methods include forming a first gate pattern on a semiconductor that includes a first recess having a first width, A dielectric spacer is formed on a sidewall of the first recess to define a second recess in the first recess that has a second width that is smaller than the first width. A gate having the second width is formed in the second recess.
    Type: Application
    Filed: September 25, 2013
    Publication date: March 26, 2015
    Applicant: CREE, INC.
    Inventors: Zoltan Ring, Dan Namishia
  • Methods of forming contact structures including alternating metal and silicon layers and related devices
    Patent number: 8563372
    Abstract: A method of forming a semiconductor device, the method comprising providing a semiconductor layer, and providing a first layer of a first metal on the semiconductor layer. A second layer may be provided on the first layer of the first metal. The second layer may include a layer of silicon and a layer of a second metal, and the first and second metals may be different. The first metal may be titanium and the second metal may be nickel. Related devices, structures, and other methods are also discussed.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: October 22, 2013
    Assignee: Cree, Inc.
    Inventors: Helmut Hagleitner, Zoltan Ring, Scott Sheppard, Jason Henning, Jason Gurganus, Dan Namishia
  • Methods of Forming Contact Structures Including Alternating Metal and Silicon Layers and Related Devices
    Publication number: 20110193135
    Abstract: A method of forming a semiconductor device, the method comprising providing a semiconductor layer, and providing a first layer of a first metal on the semiconductor layer. A second layer may be provided on the first layer of the first metal. The second layer may include a layer of silicon and a layer of a second metal, and the first and second metals may be different. The first metal may be titanium and the second metal may be nickel. Related devices, structures, and other methods are also discussed.
    Type: Application
    Filed: February 11, 2010
    Publication date: August 11, 2011
    Inventors: Helmut Hagleitner, Zoltan Ring, Scott Sheppard, Jason Henning, Jason Gurganus, Dan Namishia