Patents by Inventor Dan Nicolaescu
Dan Nicolaescu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11513818Abstract: An approach includes the use of a description of instructions for invoking hardware accelerator and for a hardware accelerator to execute those instructions. In some embodiments, the instructions for invoking hardware accelerator and for a hardware accelerator to execute those instructions are described using a single language. These descriptions are then compiled into other languages for use in tool chains for generating simulators (a hardware and instruction set simulator and a hardware accelerator simulator). In some embodiments, the approach illustrated herein can be combined with state machine functionality to manage the execution of instructions that require multiple states. In some embodiments, the approach illustrated herein can be combined with an external register file for transferring information between a processor and a hardware accelerator.Type: GrantFiled: September 30, 2020Date of Patent: November 29, 2022Assignee: Cadence Design Systems, Inc.Inventors: Rong Chen, He Xiao, Nenad Nedeljkovic, Nupur B. Andrews, Dan Nicolaescu, James Sangkyu Kim
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Patent number: 11063614Abstract: In some examples, a polar decoder for implementing polar decoding of a codeword can be configured to implement alogarithmic likelihood ratio (LLR), an even bit, and an odd bit buffer, respectively. The polar decoder can be configured to employ a list-to-buffer mapping state register for the LLR buffer for loading LLR values for each path at a given stage of a decoding graph. The polar decoder can be configured to update and store LLR values for each path at the given stage. The polar decoder can be configured to employ a list-to-buffer mapping state register for the even bit buffer for loading even bit values from the even bit buffer and loading odd bit values from the odd bit buffer, and updating even or odd bit values for each path at the given stage of the decoding graph.Type: GrantFiled: November 21, 2019Date of Patent: July 13, 2021Assignee: CADENCE DESIGN SYSTEMS, INC.Inventors: Rong Chen, Poojan Rajeshbhai Shah, Dan Nicolaescu
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Patent number: 9619205Abstract: A computer implemented method for performing floating point operations as part of a processor architecture that also includes fixed point operations is disclosed. The computer implemented method includes providing a group of instructions within the fixed point architecture. A floating point value is split between two programmer visible registers. In a system and method in accordance with the present invention a new form of floating point representation and associated processor operations, including efficient complex number representations and operations are utilized.Type: GrantFiled: June 4, 2014Date of Patent: April 11, 2017Assignee: Cadence Design Systems, Inc.Inventors: Christopher Rowen, Teodur Doru Cuturela, Xiaoguang Lv, Dan Nicolaescu, Pushkar Patwardhan, Manish Ashok Paradkar, Pranava Tummala
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Patent number: 8476602Abstract: A magnet used in an ion beam irradiation apparatus includes a pair of magnetic poles arranged facing each other on an inner side of the magnet across an ion beam; a plurality of magnetic field concentrating members that are arranged on each of the opposing surfaces of the magnetic poles and that perform a function of trapping electrons between the magnetic poles; and a protective member that covers opposing surfaces of the magnetic field concentrating members.Type: GrantFiled: December 13, 2010Date of Patent: July 2, 2013Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Dan Nicolaescu, Masao Naito
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Patent number: 8461548Abstract: To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.Type: GrantFiled: April 27, 2010Date of Patent: June 11, 2013Assignees: Nissin ION Equipment Co., Ltd., Kyoto UniversityInventors: Dan Nicolaescu, Shigeki Sakai, Junzo Ishikawa, Yasuhito Gotoh
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Patent number: 8405052Abstract: An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam.Type: GrantFiled: October 15, 2010Date of Patent: March 26, 2013Assignee: Nissin Ion Equipment Co., Ltd.Inventor: Dan Nicolaescu
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Patent number: 8164070Abstract: A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function.Type: GrantFiled: December 5, 2008Date of Patent: April 24, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventor: Dan Nicolaescu
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Publication number: 20120085918Abstract: To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.Type: ApplicationFiled: April 27, 2010Publication date: April 12, 2012Applicants: KYOTO UNIVERSITY, NISSIN ION EQUIPMENT CO., LTD.Inventors: Dan Nicolaescu, Shigeki Sakai, Junzo Ishikawa, Yasuhito Gotoh
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Publication number: 20110220808Abstract: An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam.Type: ApplicationFiled: October 15, 2010Publication date: September 15, 2011Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventor: Dan Nicolaescu
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Publication number: 20110204250Abstract: A magnet used in an ion beam irradiation apparatus includes a pair of magnetic poles arranged facing each other on an inner side of the magnet across an ion beam; a plurality of magnetic field concentrating members that are arranged on each of the opposing surfaces of the magnetic poles and that perform a function of trapping electrons between the magnetic poles; and a protective member that covers opposing surfaces of the magnetic field concentrating members.Type: ApplicationFiled: December 13, 2010Publication date: August 25, 2011Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventors: Dan NICOLAESCU, Masao Naito
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Patent number: 7935944Abstract: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from ?15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is ?).Type: GrantFiled: June 12, 2007Date of Patent: May 3, 2011Assignees: Kyoto University, Nissin Ion Equipment Co., Ltd.Inventors: Junzo Ishikawa, Dan Nicolaescu, Yasuhito Gotoh, Shigeki Sakai
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Publication number: 20100140494Abstract: A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function.Type: ApplicationFiled: December 5, 2008Publication date: June 10, 2010Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventor: Dan NICOLAESCU
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Publication number: 20090203199Abstract: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from ?15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is ?).Type: ApplicationFiled: June 12, 2007Publication date: August 13, 2009Applicants: KYOTO UNIVERSITY, NISSIN ION EQUIPMENT CO., LTD.Inventors: Junzo Ishikawa, Dan Nicolaescu, Yasuhito Gotoh, Shigeki Sakai