Patents by Inventor Dan Steigerwald
Dan Steigerwald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658456Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: GrantFiled: May 12, 2021Date of Patent: May 23, 2023Assignee: KYOCERA SLD Laser, Inc.Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Publication number: 20210344164Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: ApplicationFiled: May 12, 2021Publication date: November 4, 2021Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Patent number: 11011889Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: GrantFiled: February 14, 2020Date of Patent: May 18, 2021Assignee: KYOCERA SLD Laser, Inc.Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Publication number: 20200274333Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: ApplicationFiled: February 14, 2020Publication date: August 27, 2020Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Patent number: 10566767Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: GrantFiled: November 14, 2016Date of Patent: February 18, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Patent number: 10367334Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: June 7, 2016Date of Patent: July 30, 2019Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Publication number: 20170063047Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: ApplicationFiled: November 14, 2016Publication date: March 2, 2017Applicant: Soraa Laser Diode, Inc.Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Patent number: 9520697Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: January 20, 2015Date of Patent: December 13, 2016Assignee: SORAA LASER DIODE, INC.Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Publication number: 20160294162Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: June 7, 2016Publication date: October 6, 2016Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Patent number: 9379525Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: June 23, 2014Date of Patent: June 28, 2016Assignee: SORAA LASER DIODE, INC.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Publication number: 20150229107Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: June 23, 2014Publication date: August 13, 2015Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Publication number: 20150229108Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: January 20, 2015Publication date: August 13, 2015Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring