Patents by Inventor Dana Tribula
Dana Tribula has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9075408Abstract: Methods and apparatus for enhanced control, monitoring and recording of incoming chemical and power use, and emissions of electronic device manufacturing systems are provided. In some embodiments, integrated sub-fab system systems may monitor the energy usage of the sub-fab equipment. The tool can enter many different depths of energy savings modes such as idle (shallow energy savings where production equipment can recover to normal production with no quality or throughput impact in seconds), sleep (deeper energy savings where production equipment can recover in minutes), or hibernate (where production equipment may require hours to recover not to have impact on quality, or throughput) for the system. In some embodiments, the system may monitor and display all gas emissions in a sub-fab as well as the Semi S23 method reporting of CO2 equivalent emission. The system may monitor effluent process gases and energy use from the process tool and sub-fab equipment.Type: GrantFiled: November 14, 2010Date of Patent: July 7, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Youssef A. Loldj, Maxime Cayer, Jay J. Jung, Shaun Crawford, Dana Tribula, Daniel O. Clark
-
Publication number: 20110144791Abstract: Methods and apparatus for enhanced control, monitoring and recording of incoming chemical and power use, and emissions of electronic device manufacturing systems are provided. In some embodiments, integrated sub-fab system systems may monitor the energy usage of the sub-fab equipment. The tool can enter many different depths of energy savings modes such as idle (shallow energy savings where production equipment can recover to normal production with no quality or throughput impact in seconds), sleep (deeper energy savings where production equipment can recover in minutes), or hibernate (where production equipment may require hours to recover not to have impact on quality, or throughput) for the system. In some embodiments, the system may monitor and display all gas emissions in a sub-fab as well as the Semi S23 method reporting of CO2 equivalent emission. The system may monitor effluent process gases and energy use from the process tool and sub-fab equipment.Type: ApplicationFiled: November 14, 2010Publication date: June 16, 2011Applicant: APPLIED MATERIALS, INC.Inventors: YOUSSEF A. LOLDJ, MAXIME CAYER, JAY J. JUNG, SHAUN CRAWFORD, DANA TRIBULA, DANIEL O. CLARK
-
Patent number: 6803325Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.Type: GrantFiled: April 10, 2002Date of Patent: October 12, 2004Assignee: Applied Materials Inc.Inventors: Hichem M'Saad, Dana Tribula, Manoj Vellaikal, Farhad Moghadam, Sameer Desai
-
Patent number: 6713390Abstract: A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.Type: GrantFiled: July 12, 2002Date of Patent: March 30, 2004Assignee: Applied Materials Inc.Inventors: Hichem M'Saad, Seon Mee Cho, Dana Tribula
-
Patent number: 6599574Abstract: The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen.Type: GrantFiled: April 4, 1996Date of Patent: July 29, 2003Assignee: Applied Materials Inc.Inventors: Ellie Yieh, Paul Gee, Li-Qun Xia, Francimar Campana, Shankar Venkataranan, Dana Tribula, Bang Nguyen
-
Publication number: 20030032282Abstract: A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.Type: ApplicationFiled: July 12, 2002Publication date: February 13, 2003Applicant: Applied Materials, Inc.Inventors: Hichem M'Saad, Seon Mee Cho, Dana Tribula
-
Publication number: 20020150682Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.Type: ApplicationFiled: April 10, 2002Publication date: October 17, 2002Applicant: Applied Materials, Inc.Inventors: Hichem M'Saad, Dana Tribula, Manoj Vellaikal, Farhad Moghadam, Sameer Desai
-
Patent number: 6410457Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.Type: GrantFiled: May 11, 2000Date of Patent: June 25, 2002Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Dana Tribula, Manoj Vellaikal, Farhad Moghadam, Sameer Desai
-
Patent number: 6399489Abstract: A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less.Type: GrantFiled: November 1, 1999Date of Patent: June 4, 2002Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Seon Mee Cho, Dana Tribula