Patents by Inventor Daniel A. Ouellette
Daniel A. Ouellette has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240184829Abstract: Systems and methods are disclosed for training and deployment of machine learning-based models that dynamically translate natural language to database query language, and include automation of training data generation, query representation language, and adaptive model training. A method for generating datasets for a natural language interface to a database includes a database query builder, which receives insights regarding the database, and based at least in part on the database insights builds a plurality of database queries. The method further includes generating a data distribution of natural language queries paired with corresponding database queries by, for each one of the plurality of database queries, pairing the database query to a natural language query and one or more paraphrases of the natural language query, and projecting the data distribution onto a plurality of segmented text distributions and applying one or more control signals to generate an optimal training data distribution.Type: ApplicationFiled: February 18, 2022Publication date: June 6, 2024Inventors: Suryatapa ROY, Nichloas Daniel NYGREN, Joshua David SIROTA, Kelly CHERNIWCHAN, Reggie Leander OUELLETTE
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Patent number: 11770979Abstract: A memory device includes a bottom electrode, a conductive layer such as an alloy including ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel junction (pMTJ) on the conductive layer. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet on the tunnel barrier. The memory device further includes a synthetic antiferromagnetic (SAF) structure that is ferromagnetically coupled with the fixed magnet to pin a magnetization of the fixed magnet. The conductive layer has a crystal texture which promotes high quality FCC <111> crystal texture in the SAF structure and improves perpendicular magnetic anisotropy of the fixed magnet.Type: GrantFiled: June 29, 2018Date of Patent: September 26, 2023Assignee: Intel CorporationInventors: Daniel Ouellette, Justin Brockman, Tofizur Rahman, Angeline Smith, Andrew Smith, Christopher Wiegand, Oleg Golonzka
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Patent number: 11737368Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.Type: GrantFiled: March 27, 2019Date of Patent: August 22, 2023Assignee: Intel CorporationInventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Michael Robinson, Huiying Liu
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Patent number: 11411173Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.Type: GrantFiled: June 15, 2018Date of Patent: August 9, 2022Assignee: Intel CorporationInventors: Angeline Smith, Justin Brockman, Tofizur Rahman, Daniel Ouellette, Andrew Smith, Juan Alzate Vinasco, James ODonnell, Christopher Wiegand, Oleg Golonzka
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Patent number: 11380838Abstract: A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.Type: GrantFiled: June 29, 2018Date of Patent: July 5, 2022Assignee: Intel CorporationInventors: Justin Brockman, Conor Puls, Stephen Wu, Christopher Wiegand, Tofizur Rahman, Daniel Ouellette, Angeline Smith, Andrew Smith, Pedro Quintero, Juan Alzate-Vinasco, Oleg Golonzka
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Patent number: 11063088Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.Type: GrantFiled: December 6, 2019Date of Patent: July 13, 2021Assignee: Intel CorporationInventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Aaron Littlejohn, Juan G. Alzate-Vinasco, Yu-Jin Chen, Tanmoy Pramanik
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Publication number: 20210175284Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.Type: ApplicationFiled: December 6, 2019Publication date: June 10, 2021Applicant: Intel CorporationInventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Aaron Littlejohn, Juan G. Alzate-Vinasco, Yu-Jin Chen, Tanmoy Pramanik
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Patent number: 10943950Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.Type: GrantFiled: March 27, 2019Date of Patent: March 9, 2021Assignee: Intel CorporationInventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Aaron Littlejohn, Michael Robinson, Huiying Liu
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Publication number: 20200313084Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.Type: ApplicationFiled: March 27, 2019Publication date: October 1, 2020Applicant: Intel CorporationInventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Michael Robinson, Huiying Liu
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Publication number: 20200313074Abstract: A memory device includes a first electrode, a second electrode and a magnetic junction between the first and the second electrode. The magnetic junction includes a first magnetic structure that includes a first magnet including an alloy of cobalt and tungsten, and a second magnet above the first magnet. The first and the second magnets are separated by a non-magnetic spacer layer. The magnetic junction further includes a layer including a metal and oxygen on the first magnetic structure. The tunnel barrier layer has an <001> crystal texture. The magnetic junction further includes a third magnet on the tunnel barrier layer. The third magnet has a magnetization which can change in response to torque from a current tunneling through the tunnel barrier layer.Type: ApplicationFiled: March 27, 2019Publication date: October 1, 2020Applicant: Intel CorporationInventors: Angeline Smith, Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Andrew Smith, James Pellegren
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Publication number: 20200312907Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.Type: ApplicationFiled: March 27, 2019Publication date: October 1, 2020Applicant: Intel CorporationInventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Aaron Littlejohn, Michael Robinson, Huiying Liu
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Publication number: 20200006634Abstract: A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.Type: ApplicationFiled: June 29, 2018Publication date: January 2, 2020Applicant: Intel CorporationInventors: Justin Brockman, Conor Puls, Stephen Wu, Christopher Wiegand, Tofizur Rahman, Daniel Ouellette, Angeline Smith, Andrew Smith, Pedro Quintero, Juan Alzate-Vinasco, Oleg Golonzka
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Publication number: 20200006632Abstract: A memory device includes a bottom electrode, a conductive layer such as an alloy including ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel junction (pMTJ) on the conductive layer. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet on the tunnel barrier. The memory device further includes a synthetic antiferromagnetic (SAF) structure that is ferromagnetically coupled with the fixed magnet to pin a magnetization of the fixed magnet. The conductive layer has a crystal texture which promotes high quality FCC <111> crystal texture in the SAF structure and improves perpendicular magnetic anisotropy of the fixed magnet.Type: ApplicationFiled: June 29, 2018Publication date: January 2, 2020Applicant: Intel CorporationInventors: Daniel Ouellette, Justin Brockman, Tofizur Rahman, Angeline Smith, Andrew Smith, Christopher Wiegand, Oleg Golonzka
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Publication number: 20190386209Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.Type: ApplicationFiled: June 15, 2018Publication date: December 19, 2019Applicant: Intel CorporationInventors: Angeline Smith, Justin Brockman, Tofizur Rahman, Daniel Ouellette, Andrew Smith, Juan Alzate Vinasco, James ODonnell, Christopher Wiegand, Oleg Golonzka
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Patent number: 9221986Abstract: A method of modifying a particle that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S-ZM to form a substituted reactive intermediate [Y]a—X—(N—S-ZM)b, and reacting the particle with the substituted reactive intermediate [Y]a—X—(N—S-ZM)b to attach the substituted reactive intermediate to the surface of the particle to form a surface modified particle. The particle may comprise at least one of a dye particle, an inorganic pigment particle, an additive, or a combination thereof. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group. Y may be a halogen leaving group. N may be a nucleophilic group. S may be an organic group. ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and wherein if b is 2 or 3, each N—S-ZM can be the same or different.Type: GrantFiled: April 7, 2010Date of Patent: December 29, 2015Assignee: Sensient Colors LLCInventors: Puthalath K. Sujeeth, John P. Kane, Daniel A. Ouellette, Mark Ulrich
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Patent number: 8226761Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S—ZM to form a substituted reactive intermediate [Y]a—X—(N—S—ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a—X—(N—S—ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each N—S—ZM can be the same or different.Type: GrantFiled: January 20, 2012Date of Patent: July 24, 2012Assignee: Sensient Colors LLCInventors: Puthalath K. Sujeeth, John P. Kane, Daniel A. Ouellette, Mark Ulrich, Vincent Shing, Michael Bogomolny
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Publication number: 20120118205Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S—ZM to form a substituted reactive intermediate [Y]a—X—(N—S—ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a—X—(N—S—ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each N—S—ZM can be the same or different.Type: ApplicationFiled: January 20, 2012Publication date: May 17, 2012Inventors: Puthalath K. Sujeeth, John P. Kane, Daniel A. Ouellette, Mark Ulrich, Vincent Shing, Michael Bogomolny
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Patent number: 8147608Abstract: A method of producing a modified pigment by sulfonating a pigment and subsequently oxidizing the pigment. The modified pigment may have sulfonic acid and carboxyl surface modifying groups attached to the surface of the pigment. Charge balancing counterions such as alkali metals, alkaline earth metals and NR1R2R3H+, where R1, R2 and R3 are independently H or C1-C5 alkyl groups, may be associated with the surface modifying groups. The modified pigment is combined with water to produce a dispersion that can be used in such applications as coatings, paints, papers, adhesives, latexes, toners, textiles, fibers, plastics and inks.Type: GrantFiled: March 8, 2011Date of Patent: April 3, 2012Assignee: Sensient Colors LLCInventors: Puthalath K. Sujeeth, Mark Ulrich, Gabe Srouji, John P. Kane, Daniel A. Ouellette
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Patent number: 8118924Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S—ZM to form a substituted reactive intermediate [Y]a—X—(N—S—ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a—X—(N—S—ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each. N—S—ZM can be the same or different.Type: GrantFiled: May 17, 2011Date of Patent: February 21, 2012Assignee: Sensient Colors LLCInventors: Puthalath K. Sujeeth, John P. Kane, Daniel A. Ouellette, Mark Ulrich, Vincent Shing, Michael Bogomolny
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Publication number: 20110308430Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X-[Y]n reactive group with a secondary compound N-S-ZM to form a substituted reactive intermediate [Y]aX-(N-S-ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a-X-(N-S-ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each. N-S-ZM can be the same or different.Type: ApplicationFiled: May 17, 2011Publication date: December 22, 2011Inventors: Puthalath K. Sujeeth, John P. Kane, Daniel A. Ouellette, Mark Ulrich, Vincent Shing, Michael Bogomolny