Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

Abstract: The present disclosure relates to methods and apparatus for hybrid rendering of video/graphics content by a graphics processing unit. The apparatus can configure the graphics processing unit of a display apparatus to perform multiple rendering passes for a frame of a scene to be displayed on a display device. Moreover, the apparatus can control the graphics processing unit to perform a first rendering pass of the multiple rendering passes to generate a first render target that is stored in either an on-chip graphics memory of the GPU or a system of the display apparatus. The apparatus can also control the graphics processing unit to perform a second rendering pass to generate a second render target that is alternatively stored in the system memory of the display apparatus or on-chip graphics memory of the GPU.

Abstract: The present disclosure relates to methods and apparatus for hybrid rendering of video/graphics content by a graphics processing unit. The apparatus can configure the graphics processing unit of a display apparatus to perform multiple rendering passes for a frame of a scene to be displayed on a display device. Moreover, the apparatus can control the graphics processing unit to perform a first rendering pass of the multiple rendering passes to generate a first render target that is stored in either an on-chip graphics memory of the GPU or a system of the display apparatus. The apparatus can also control the graphics processing unit to perform a second rendering pass to generate a second render target that is alternatively stored in the system memory of the display apparatus or on-chip graphics memory of the GPU.

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

Abstract: A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.

Abstract: The invention relates to a method of depositing silicon dioxide films using plasma enhanced chemical vapour deposition (PECVD) and more particularly using tetraethyl orthosilicate (TEOS). The process can be carried out at standard temperatures and also at low temperatures which is useful for manufacturing wafers with through silicon vias.