Abstract: A clock circuit configured to generate a falling edge independently of an input clock signal is disclosed. In one embodiment, a clock circuit includes an input circuit coupled to receive an input clock signal. A corresponding first clock signal is provided on a first clock node, while a second clock signal that is a delayed version of the first is provided on a second clock signal. The clock circuit may generate an output clock signal based on the first and second clock signals and a feedback signal received from a functional circuit coupled to receive the output clock signal. The rising edge of the output clock signal is generated dependent upon when the rising edge of the input clock signal is received. The falling edge of the output clock signal is generated by the clock circuit independently of when the falling edge of the input clock signal is received.

Abstract: Embodiments of a memory are disclosed that may allow for a negative boost of data lines during a write. The memory device may include a data input circuit, an address decode circuit and a plurality of sub-arrays. Each of the sub-arrays may include a plurality of columns, a write selection circuit, a first write driver circuit, a second write driver circuit, and a boost circuit. Each of the columns may include a plurality of data storage cells. The write selection circuit may select a column of the plurality of columns. Each of the write driver circuits may be configured to discharge a data line of a selected column into a common node. The boost circuit may be configured to initialize the common node to the first voltage level and couple the common node to a second voltage level, where the second voltage level is lower than the first voltage level.

Abstract: A memory includes a wordline driver having reduced leakage. The memory includes a storage array coupled to a first voltage supply, and a number of wordline driver units each including a driver inverter. During a low power mode, the voltage of the voltage supply coupled to the wordline circuit is reduced or removed, while the voltage of the voltage supply coupled to the storage array is kept at least at a retention voltage. In addition a p-type transistor is coupled between the array voltage supply and an input to the wordline driver inverter, thereby keeping the output of the wordline driver inverter at a low logic level to prevent inadvertent wordline firing.

Abstract: Embodiments of a memory are disclosed that may allow for a negative boost of data lines during a write. The memory device may include a data input circuit, an address decode circuit and a plurality of sub-arrays. Each of the sub-arrays may include a plurality of columns, a write selection circuit, a first write driver circuit, a second write driver circuit, and a boost circuit. Each of the columns may include a plurality of data storage cells. The write selection circuit may select a column of the plurality of columns. Each of the write driver circuits may configured to discharge a data line of a selected column into a common node. The boost circuit may be configured to initialize the common node to the first voltage level and couple the common node to a second voltage level, where the second voltage level is lower than the first voltage level.

Abstract: A memory includes an I/O unit that is shared between multiple storage arrays. The shared I/O unit provides output data from the arrays. The memory includes an isolation unit connected between each storage array and the shared I/O unit. In addition, each of the storage arrays and the shared I/O unit may be connected to a separate switched voltage domain through for example, power gating circuits. If one or more of the storage arrays is placed in retention or low-voltage mode, the isolation units that are coupled to the affected storage arrays may be configured to isolate the bitlines of those storage arrays from the shared I/O data paths.

Abstract: A memory includes an I/O unit that is shared between multiple storage arrays. The shared I/O unit provides output data from the arrays. The memory includes an isolation unit connected between each storage array and the shared I/O unit. In addition, each of the storage arrays and the shared I/O unit may be connected to a separate switched voltage domain through for example, power gating circuits. If one or more of the storage arrays is placed in retention or low-voltage mode, the isolation units that are coupled to the affected storage arrays may be configured to isolate the bitlines of those storage arrays from the shared I/O data paths.

Abstract: A memory includes an I/O unit that is shared between multiple storage arrays. The shared I/O unit provides output data from the arrays. The memory includes an isolation unit connected between each storage array and the shared I/O unit. In addition, each of the storage arrays and the shared I/O unit may be connected to a separate switched voltage domain through for example, power gating circuits. If one or more of the storage arrays is placed in retention or low-voltage mode, the isolation units that are coupled to the affected storage arrays may be configured to isolate the bitlines of those storage arrays from the shared I/O data paths.

Abstract: A sense amplifier latch may be provided to controllably latch the output of a sense amplifier. The latch may open in response to assertion of a latch enable signal to receive data, and close in response to deassertion of the latch enable signal to capture and store the received data. Additionally, a multiplexer may be provided to select from among multiple sources of test data, such as scan data and bypass data. The multiplexer may produce a test data input to the sense amplifier latch that encodes a data value and a control value that causes the data value to be selected. Depending on the state of the test data input, the sense amplifier latch may output either a value received from the sense amplifier or a value encoded in the test data input.

Abstract: A memory includes a shared I/O unit that is shared between multiple storage arrays provides output data from the arrays. The shared I/O includes an output latch with an integrated output clamp. The I/O unit may be configured to provide output data from the storage arrays via data output signal paths. The I/O unit includes an output latch configured to force a valid logic level on the data output signal paths in response to a power down condition.

Abstract: A sense amplifier of a memory array may be provided to amplify data presented from storage cells of the memory array. Additionally, a sense amplifier latch may be provided to store data received from the sense amplifier. The sense amplifier may be enabled for operation by a sense amplifier enable signal that is distinct from a clock signal. Moreover, the latch enable signal of the sense amplifier latch may be controlled by the sense amplifier enable signal, such that the sense amplifier latch opens in response to activation of the sense amplifier and closes in response to deactivation of the sense amplifier.

Abstract: A memory includes an I/O unit that is shared between multiple storage arrays. The shared I/O unit provides output data from the arrays. The memory includes an isolation unit connected between each storage array and the shared I/O unit. In addition, each of the storage arrays and the shared I/O unit may be connected to a separate switched voltage domain through for example, power gating circuits. If one or more of the storage arrays is placed in retention or low-voltage mode, the isolation units that are coupled to the affected storage arrays may be configured to isolate the bitlines of those storage arrays from the shared I/O data paths.

Abstract: A memory includes a shared I/O unit that is shared between multiple storage arrays provides output data from the arrays. The shared I/O includes an output latch with an integrated output clamp. The I/O unit may be configured to provide output data from the storage arrays via data output signal paths. The I/O unit includes an output latch configured to force a valid logic level on the data output signal paths in response to a power down condition.

Abstract: A memory includes a wordline driver having reduced leakage. The memory includes a storage array coupled to a first voltage supply, and a number of wordline driver units each including a driver inverter. During a low power mode, the voltage of the voltage supply coupled to the wordline circuit is reduced or removed, while the voltage of the voltage supply coupled to the storage array is kept at least at a retention voltage. In addition a p-type transistor is coupled between the array voltage supply and an input to the wordline driver inverter, thereby keeping the output of the wordline driver inverter at a low logic level to prevent inadvertent wordline firing.

Abstract: A sense amplifier of a memory array may be provided to amplify data presented from storage cells of the memory array. Additionally, a sense amplifier latch may be provided to store data received from the sense amplifier. The sense amplifier may be enabled for operation by a sense amplifier enable signal that is distinct from a clock signal. Moreover, the latch enable signal of the sense amplifier latch may be controlled by the sense amplifier enable signal, such that the sense amplifier latch opens in response to activation of the sense amplifier and closes in response to deactivation of the sense amplifier.

Abstract: A sense amplifier latch may be provided to controllably latch the output of a sense amplifier. The latch may open in response to assertion of a latch enable signal to receive data, and close in response to deassertion of the latch enable signal to capture and store the received data. Additionally, a multiplexer may be provided to select from among multiple sources of test data, such as scan data and bypass data. The multiplexer may produce a test data input to the sense amplifier latch that encodes a data value and a control value that causes the data value to be selected. Depending on the state of the test data input, the sense amplifier latch may output either a value received from the sense amplifier or a value encoded in the test data input.