Abstract: A redox flow battery includes positive and negative electrodes respectfully located in half-cells separated by a porous silicon wafer separator formed by MEMS Technology. The first half cell and the second half cell each preferably include a plurality of dividers or barriers configured to create flow channels which introduce turbulence ensuring the electrolytes are changing or mixing at surfaces of the electrodes and the membrane. Also disclosed is a solar energy generation and storage system which includes a photovoltaic cell and an electrochemical energy storage battery which share a common electrode. Also disclosed is a membrane-less redox flow electrical energy storage battery, having a cathode electrode, an anode electrode formed of a porous silicon substrate in which surfaces of the pores of the porous silicon substrate are coated at least in part with a metal silicide, and an electrolyte.

Abstract: This disclosure provides photonic integrated chip that has an optical waveguide located on a photonic circuit substrate that includes a photonic circuit that is optically coupled to the waveguide. A microfluidic channel is in a silicon substrate and is attached to the photonic circuit substrate. The microfluidic channel is positioned over the optical waveguide such that its side surfaces and an outermost surface extend into the microfluidic channel. The microfluidic channel extends along a length of the optical waveguide, and nanoparticles are located on or adjacent the optical waveguide located within the microfluidic channel.

Abstract: This disclosure presents a docking station into which a test card can be inserted for rapid analyte detection and reporting. This docking station has portable capability and can include wire or wireless transmission to a local server or cloud-based server. A test card that has a test structure located on the test structure that includes a modified waveguide can be inserted into the and a docking station that includes a laser and interferometer provides for accurate and rapid detection of a test sample.

Abstract: A redox flow battery includes positive and negative electrodes respectfully located in half-cells separated by a porous silicon wafer separator formed by MEMS Technology. The first half cell and the second half cell each preferably include a plurality of dividers or barriers configured to create flow channels which introduce turbulence insuring the electrolytes are changing or mixing at surfaces of the electrodes and the membrane. Also disclosed is a solar energy generation and storage system which includes a photovoltaic cell and an electrochemical energy storage battery which share a common electrode. Also disclosed is a membrane-less redox flow electrical energy storage battery, having a cathode electrode; an anode electrode formed of a porous silicon substrate in which surfaces of the pores of the porous silicon substrate are coated at least in part with a metal silicide; and, an electrolyte.

Abstract: In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.

Abstract: This disclosure provides photonic integrated chip that has an optical waveguide located on a photonic circuit substrate that includes a photonic circuit that is optically coupled to the waveguide. A microfluidic channel is in a silicon substrate and is attached to the photonic circuit substrate. The microfluidic channel is positioned over the optical waveguide such that its side surfaces and an outermost surface extend into the microfluidic channel. The microfluidic channel extends along a length of the optical waveguide, and nanoparticles are located on or adjacent the optical waveguide located within the microfluidic channel.

Abstract: This disclosure presents a docking station into which a test card can be inserted for rapid analyte detection and reporting. This docking station has portable capability and can include wire or wireless transmission to a local server or cloud-based server. A test card that has a test structure located on the test structure that includes a modified waveguide can be inserted into the and a docking station that includes a laser and interferometer provides for accurate and rapid detection of a test sample.

Abstract: Disclosed is a Proton Exchange Membrane Fuel Cell (PEMFC) incorporating a porous membrane element formed of a porous silicon wafer, in which the pores are coated at least in part with a noble metal. Alternatively, the porous silicon wafer may be sandwiched between paper, carbon or graphite sheet impregnated with a noble metal. The separator is formed of using MEMS Technology. Also disclosed is a lithium ion battery, has a cathode electrode; an anode electrode formed of a porous silicon substrate in which surfaces of the pores of the porous silicon substrate are coated at least in part with a metal silicide; a separator element disposed between the cathode and the anode; and an electrolyte.

Abstract: In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.

Abstract: An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

Abstract: An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

Abstract: An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

Abstract: An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

Abstract: A device for medium wavelength infrared emission and a method for the manufacture thereof is provided. The device has a semiconductor substrate; a passive hermetic barrier disposed upon the substrate, and an emitter element disposed within said hermetic barrier; and a mirror.

Abstract: A method for the singulation of integrated circuit die, the method including: etching a semiconductor layer disposed on a silicon oxide dielectric layer, thereby forming a trench defining a boundary of the die; depositing a silicon nitride layer in the trench; coating the semiconductor layer with an oxide layer such that the trench is filled; removing part of the oxide layer from the semiconductor layer such that the oxide layer only remains in the trench; mounting the semiconductor layer to a carrier; removing the silicon oxide dialectic layer, the nitride layer, and the oxide layer; and releasing the die from the carrier. The method is suitable for irregularly shaped or extremely small die and is compatible with traditional CMOS processes.

Abstract: A method for the singulation of integrated circuit die, the method including: etching a semiconductor layer disposed on a silicon oxide dielectric layer, thereby forming a trench defining a boundary of the die; depositing a silicon nitride layer in the trench; coating the semiconductor layer with an oxide layer such that the trench is filled; removing part of the oxide layer from the semiconductor layer such that the oxide layer only remains in the trench; mounting the semiconductor layer to a carrier; removing the silicon oxide dialectic layer, the nitride layer, and the oxide layer; and releasing the die from the carrier. The method is suitable for irregularly shaped or extremely small die and is compatible with traditional CMOS processes.

Abstract: A system is provided for the manufacture of carbon based electrical components including, an ultraviolet light source; a substrate receiving unit whereby a substrate bearing a first layer of carbon based semiconductor is received and disposed beneath the ultraviolet light source; a mask disposed between the ultraviolet light source and the carbon based semiconductor layer; a doping agent precursor source; and environmental chemical controls, configured such that light from the ultraviolet light source irradiates a doping agent precursor and the first carbon layer.