Abstract: Exemplary processing methods include forming a nucleation layer on a substrate. The nucleation layer may be formed by physical vapor deposition (PVD), and the physical vapor deposition may be characterized by a deposition temperature of greater than or about 700° C. The methods may further include forming a patterned mask layer on the nucleation layer. The patterned mask layer may include openings that expose portions of the nucleation layer. Gallium-and-nitrogen-containing regions may be formed on the exposed portions of the nucleation layer. In additional embodiments, the nucleation layer may include a first and second portion separated by an interlayer that stop the propagation of at least some dislocations in the nucleation layer.

Abstract: A wafer processing system includes a plurality of evacuable housings connected in series to form a processing line, with a plurality isolation valves to separately isolate the housings. A track extends through the connected housings. At least one wafer carrier is moveable on the track, through the housings and along the processing line. The wafer carrier holds wafers in vertical orientation and also includes a plurality of magnets aligned along its bottom. Outside the housings, a plurality of magnetic drive units are aligned parallel with the track, with one drive unit per housing. Each drive unit includes a motor driven conveyor with a plurality of magnets mounted thereon which imposes magnetic fields inside the housing to magnetically couple with the magnets mounted on the carrier. When the motor driven conveyor moves the imposed magnetic fields, the magnetic coupling causes the wafer carrier to move.