Patents by Inventor Daniel F. Baldwin

Daniel F. Baldwin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080236655
    Abstract: Solar module manufacturing methods for manufacturing a solar electric module including photovoltaic cells. The method includes applying an interconnect material to a flexible electrical backplane having preformed conductive interconnect circuitry to form interconnect attachments. The method aligns an array of back contact PV cells with the interconnect attachments. Conductive pathways are formed between the PV cells and the conductive interconnects of the flexible electrical backplane. The method applies an encapsulant material to fill spaces formed between the PV cells and the flexible electrical backplane to form a solar cell subassembly, which is incorporated into a solar electric module.
    Type: Application
    Filed: March 27, 2008
    Publication date: October 2, 2008
    Inventors: Daniel F. Baldwin, Juris P. Kalejs
  • Patent number: 6554923
    Abstract: A system and method for providing via-hole filling for microelectronic interconnections, is disclosed. Gallium metal is melted and mixed with a measured amount of copper and nickel, thereby creating a gallium alloy. Via holes are drilled within a substrate and filled with the gallium alloy. Excess gallium alloy is removed from the substrate. The substrate, having the filled via-holes therein, is then cured within the temperature range of room temperature to approximately 200 degrees Celsius. The gallium alloy may also be used for printing interconnect lines on a board surface.
    Type: Grant
    Filed: February 15, 2001
    Date of Patent: April 29, 2003
    Assignee: Georgia Tech Research Corp.
    Inventors: Swapan K. Bhattacharya, Daniel F. Baldwin
  • Publication number: 20010044206
    Abstract: A system and method for providing via-hole filling for microelectronic interconnections, is disclosed. Gallium metal is melted and mixed with a measured amount of copper and nickel, thereby creating a gallium alloy. Via holes are drilled within a substrate and filled with the gallium alloy. Excess gallium alloy is removed from the substrate. The substrate, having the filled via-holes therein, is then cured within the temperature range of room temperature to approximately 200 degrees Celsius. The gallium alloy may also be used for printing interconnect lines on a board surface.
    Type: Application
    Filed: February 15, 2001
    Publication date: November 22, 2001
    Applicant: Georgia Tech Research Corporation
    Inventors: Swapan K. Bhattacharya, Daniel F. Baldwin
  • Patent number: 6051174
    Abstract: An extrusion system for providing a foamed material in which a material such as a polymer material is supplied to an extruder for movement through a rotating screw member. The material is placed in a molten state and a foaming agent, such as a supercritical fluid, is introduced into the extruder at a selected pressure so that a two-phase mixture of the molten material and the foaming agent is formed. The foaming agent is then diffused into and dissolved in the molten material to form a single-phase solution which is forwarded from a solution formation to a nucleation device. A thermodynamic instability is induced through a rapid pressure drop, e.g., higher than 0.9 GPa/s in the nucleation device to nucleate microcells in the solution. A further shaping device, e.g., a die, can be used to produce a foamed material of a desired shape.
    Type: Grant
    Filed: January 8, 1999
    Date of Patent: April 18, 2000
    Assignee: Massachusetts Institute of Technology
    Inventors: Chul B. Park, Nam P. Suh, Daniel F. Baldwin
  • Patent number: 5866053
    Abstract: An extrusion system for providing a foamed material in which a material such as a polymer material is supplied to an extruder for movement through a rotating screw member. The material is placed in a molten state and a foaming agent, such as a supercritical fluid, is introduced into the extruder at a selected pressure so that a two-phase mixture of the molten material and the foaming agent is formed. The foaming agent is then diffused into and dissolved in the molten material to form a single-phase solution which is forwarded from a solution formation to a nucleation device. A thermodynamic instability is induced through a rapid pressure drop, e.g., higher than 0.9 GPa/s in the nucleation device to nucleate microcells in the solution. A further shaping device, e.g., a die, can be used to produce a foamed material of a desired shape.
    Type: Grant
    Filed: January 13, 1997
    Date of Patent: February 2, 1999
    Assignee: Massachusetts Institute of Technology
    Inventors: Chul B. Park, Nam P. Suh, Daniel F. Baldwin
  • Patent number: 5334356
    Abstract: A supermicrocellular foamed material and a method for producing such material, the material to be foamed such as a polymerplastic material, having a supercritical fluid, such as carbon dioxide in its supercritical state, introduced into the material to form a foamed fluid/material system having a plurality of cells distributed substantially throughout the material. Cell densities lying in a range from about 10.sup.9 to about 10.sup.15 per cubic centimeter of the material can be achieved with the average cell sizes being at least less than 2.0 microns and preferably in a range from about 0.1 micron to about 1.0 micron.
    Type: Grant
    Filed: August 24, 1992
    Date of Patent: August 2, 1994
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel F. Baldwin, Nam P. Suh, Chul B. Park, Sung W. Cha
  • Patent number: 5158986
    Abstract: A supermicrocellular foamed material and a method for producing such material, the material to be foamed such as a polymerplastic material, having a supercritical fluid, such as carbon dioxide in its supercritical state, introduced into the material to form a foamed fluid/material system having a plurality of cells distributed substantially throughout the material. Cell densities lying in a range from about 10.sup.9 to about 10.sup.15 per cubic centimeter of the material can be achieved with the average cell sizes being at least less than 2.0 microns and preferably in a range from about 0.1 micron to about 1.0 micron.
    Type: Grant
    Filed: April 5, 1991
    Date of Patent: October 27, 1992
    Assignee: Massachusetts Institute of Technology
    Inventors: Sung W. Cha, Nam P. Suh, Daniel F. Baldwin, Chul B. Park
  • Patent number: RE37932
    Abstract: A supermicrocellular foamed material and a method for producing such material, the material to be foamed such as a polymerplastic material, having a supercritical fluid, such as carbon dioxide in its supercritical state, introduced into the material to form a foamed fluid/material system having a plurality of cells distributed substantially throughout the material. Cell densities lying in a range from about 109 to about 1015 per cubic centimeter of the material can be achieved with the average cell sizes being at least less than 2.0 microns and preferably in a range from about 0.1 micron to about 1.0 micron.
    Type: Grant
    Filed: August 2, 1996
    Date of Patent: December 10, 2002
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel F. Baldwin, Nam P. Suh, Chul B. Park, Sung W. Cha