Patents by Inventor Daniel Hernandez Castillo, II
Daniel Hernandez Castillo, II has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10011741Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: March 2, 2016Date of Patent: July 3, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20160177134Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: March 2, 2016Publication date: June 23, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 9305476Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: May 12, 2015Date of Patent: April 5, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20150247063Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: May 12, 2015Publication date: September 3, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 9062230Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: September 10, 2014Date of Patent: June 23, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steve Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20140374378Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: September 10, 2014Publication date: December 25, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 8916473Abstract: An effective chemical mechanical planarization (CMP) method is provided for forming vias in silicon wafers for the fabrication of stacked devices using TSV (through-silicon via) technology. The method affords high removal rates of both metal (e.g., copper) and silicon such that a need for a grinding step prior to CMP processing may not be necessary. The method affords an approximately 1:1 Cu:Si selectivity for removal of silicon and copper under appropriate conditions and the Cu:Si selectivity is tunable by adjustment of levels of some key components.Type: GrantFiled: December 3, 2010Date of Patent: December 23, 2014Assignee: Air Products and Chemicals, Inc.Inventors: James Matthew Henry, Daniel Hernandez Castillo, II
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Patent number: 8859428Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: September 18, 2013Date of Patent: October 14, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steve Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20140110626Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: September 18, 2013Publication date: April 24, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Teresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella
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Publication number: 20110300710Abstract: An effective chemical mechanical planarization (CMP) method is provided for forming vias in silicon wafers for the fabrication of stacked devices using TSV (through-silicon via) technology. The method affords high removal rates of both metal (e.g., copper) and silicon such that a need for a grinding step prior to CMP processing may not be necessary. The method affords an approximately 1:1 Cu:Si selectivity for removal of silicon and copper under appropriate conditions and the Cu:Si selectivity is tunable by adjustment of levels of some key components.Type: ApplicationFiled: December 3, 2010Publication date: December 8, 2011Applicant: DuPont Air Products NanoMaterials, LLCInventors: James Matthew Henry, Daniel Hernandez Castillo, II
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Publication number: 20110237079Abstract: An effective method for forming through-base wafer vias for the fabrication of stacked devices, such as electronic devices, is described. The base wafer can be a silicon wafer, in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of silicon under appropriate conditions.Type: ApplicationFiled: September 23, 2010Publication date: September 29, 2011Applicant: DUPONT AIR PRODUCTS NANOMATERIALS LLCInventors: Hyoung Sik Kim, Jung Hee Lee, Daniel Hernandez Castillo, II, James Matthew Henry
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Patent number: 7351662Abstract: A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.Type: GrantFiled: September 22, 2005Date of Patent: April 1, 2008Assignee: DuPont Air Products Nanomaterials LLCInventors: Junaid Ahmed Siddiqui, Daniel Hernandez Castillo, II, Robin Edward Richards, Timothy Frederick Compton
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Patent number: 6979252Abstract: A low defectivity colloidal silica-based product slurry for use in chemical mechanical planarization (CMP) and an associated production method are described. The product slurry is produced using centrifugation of and optionally with addition of a surfactant to a starting colloidal silica (which can be a commercially available colloidal silica). The product slurry has substantially lower levels of soluble polymeric silicates than does the starting colloidal silica and affords lower defectivity levels when used in a slurry for CMP processing than does the starting colloidal silica.Type: GrantFiled: January 6, 2005Date of Patent: December 27, 2005Assignee: DuPont Air Products Nanomaterials LLCInventors: Junaid Ahmed Siddiqui, Daniel Hernandez Castillo, II, Rajat Kapoor, Tara Ranae Keefover, Robin Edward Richards