Abstract: As part of a system for processing a workpiece by applying a controlled heat to the workpiece, a heating arrangement includes an array of spaced apart heating elements for use in a confronting relationship with the workpiece to subject the workpiece to a direct radiation that is produced. A radiation shield includes a plurality of members supported for movement between (i) retracted positions, which allow the direct radiation to reach the workpiece, and (ii) extended positions, in which the plurality of members cooperate in way which serves to at least partially block the direct radiation from reaching the workpiece and to absorb radiation emitted and reflected by the workpiece and thereby achieve greater control of the time-temperature profile than previously obtainable. At least certain ones of the members move between adjacent ones of the heating elements in moving those certain members between the retracted and extended positions. Tubular, curved and plate-like member configurations can be used.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: An apparatus for controlling access to a PCI bus includes a plurality of USB host controllers, each capable of being connected to a respective USB port. A plurality of PCI cores are each coupled to respective ones of the USB host controllers. A PCI arbiter is coupled to each of the PCI cores. The PCI arbiter is capable of arbitrating multiple requests for the PCI bus, each request initiated by a communication from a respective one of the plurality of USB ports. Full-rate USB data transfer capability is provided between the PCI bus and each of the USB ports. The PCI arbiter receives a plurality of requests for the PCI bus from the PCI cores. A FIFO queue within the PCI arbiter stores a respective record corresponding to each of the PCI cores. A next one of the records is read from the FIFO queue. PCI bus access is granted to the PCI core identified in the next record. The apparatus may include a first plurality of USB ports, each coupled to a respective one of the USB host controllers.

Abstract: Process related materials including photoresist and associated residues are removed from a substrate by exposing the substrate at least to one form of ultraviolet radiation-activated reactive gas phase radical to activate reactions between the gas phase radicals and the process related materials. The substrate may be exposed to the activating UV energy. Alternatively, the substrate may be exposed to a first reactive gas phase radical, from a first source, in conjunction with at least one of a selected gas and a second species of gas phase radical from a second source. The first and second source outputs may be combined prior to entering the process chamber or may enter the processing chamber separately. Selective limitation or elimination of substrate exposure to UV radiation is described.

Abstract: A process material crust, such an ion-implanted photoresist, is removed from a treatment object. A halogen-free plasma is generated using a hydrocarbon gas in combination with oxygen gas to subject the crust to the plasma. Methane may be used as the hydrocarbon gas. This plasma may also be use to remove underlying unaltered photoresist and ion implantation related residues. The plasma may likewise be generated using a hydrogen containing gas, which may be pure hydrogen gas, in combination with oxygen gas. Several techniques are used which employ exposure of the treatment to a hydrogen/oxygen based plasma with subsequent exposure to a hydrocarbon/oxygen based plasma.

Abstract: A process and system for heating semiconductor substrates in a processing chamber on a susceptor as disclosed. In accordance with the present invention, the susceptor includes a support structure made from a material having a relatively low thermal conductivity for suspending the wafer over the susceptor. The support structure has a particular height that inhibits or prevents radial temperature gradients from forming in the wafer during high temperature processing. If needed, recesses can be formed in the susceptor for locating and positioning a support structure. The susceptor can include a wafer supporting surface defining a pocket that has a shape configured to conform to the shape of a wafer during a heat cycle.

Abstract: Small particle manganese activated alkaline earth aluminate phosphors are produced by thermal decomposition of gels or powders comprising alkaline earth, manganese salts and an organic precursor such as aluminum isopropoxide at a temperature below the normal solid state reaction temperature. The phosphor of the present invention has the empirical formula: (AE1-xMnx)O·6(Al2O3) wherein AE is selected from Ba, Sr, Ca and Mg and 0.01≦×≦0.1, having a band emission in the green region, peaking at 516 nm when excited by 147 and 173 nm radiation from Xenon gas mixture. The phosphor obtained by the present method, having uniform particle size distribution (0.05 to 5 microns), is appropriate for thin phosphor screens required for a variety of flat panel display and lamp applications.

Abstract: A Cr--C--F crystalline film was found to be suitable for use as a black matrix layer for use in conjunction with a Cr/Cu/Cr PDP electrode. Furthermore, film stack including the foregoing Cr--C--F layer, a gradated Cr--C--F transition layer and a pure Cr film can be formed in an integrated sputter deposition process and can be used as a black matrix/adhesion layers in PDP Cu electrode.

Abstract: Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material.

Abstract: A food dispensing apparatus is provided having an aluminum housing with an opening at its top surface, a cover for the opening, an outer enclosure disposed about the housing, a bag of food product disposed within the housing, a manually operated valve attached to a first end of the food bag and in fluid communication therewith for dispensing the food product, a bladder connected to a source of pressurized air and disposed within the housing for compressing the bag of food product for selective dispensing from the apparatus and a heating mechanism contained within the housing for inductively heating the food product for use.