Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: In a processing system for electroplating semiconductor wafers and similar substrates, the contact ring of the electroplating processor is removed from the rotor of the processor and replaced with a previously deplated contact ring. This allows the contact ring to be deplated in ring service module of the system, while the processor continues to operate. Wafer throughput is improved. The contact ring may be attached to a chuck for moving the contact ring between the processors and the ring service module, with the chuck quickly attachable and releasable to the rotor.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: An electroplating processor includes a base having a vessel body. A membrane assembly including a membrane housing is attached to a membrane plate. A membrane is provided on a membrane support attached to the membrane housing. An anode assembly includes an anode cup and one or more anodes in the anode cup. An anode plate is attached to the anode cup. Two or more posts on a first side of the anode plate are engageable with post fittings on the membrane plate. Latches on a second side of the anode plate are engageable with and releasable from a latch fitting on the membrane plate. The anode assembly is quickly and easily removable from the processor for maintenance, without disturbing or removing other components of the processor.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: An electroplating processor includes a base having a vessel body. A membrane assembly including a membrane housing is attached to a membrane plate. A membrane is provided on a membrane support attached to the membrane housing. An anode assembly includes an anode cup and one or more anodes in the anode cup. An anode plate is attached to the anode cup. Two or more posts on a first side of the anode plate are engageable with post fittings on the membrane plate. Latches on a second side of the anode plate are engageable with and releasable from a latch fitting on the membrane plate. The anode assembly is quickly and easily removable from the processor for maintenance, without disturbing or removing other components of the processor.

Abstract: A plating apparatus includes a vessel for holding a bath of plating liquid. A head is adapted to hold a work piece, such as a silicon wafer, in the vessel, with a seal on the head sealing against the work piece. A component cleaner assembly may be used to automatically clean a component of the plating apparatus, such as a seal or a contact ring. The cleaner assembly has a component contactor, such as a brush, on an arm. An arm actuator is linked to the arm for moving the arm from a retracted position, to a deployed position, where the contactor is in physical contact with the component. A method for cleaning a component of a plating apparatus includes moving a scrubber or contactor into contact with the component and applying a cleaning liquid onto the component adjacent to the contactor.

Abstract: An electroplating processor includes a thin lower membrane support for supporting a membrane. The lower membrane support may be provided as a flexible plastic sheet having a pattern of through-openings. The through-openings may be aligned with openings in a rigid upper membrane support. The perimeter of the lower membrane may be clamped in the same perimeter seal as used to clamp and seal the perimeter of the membrane. The lower membrane support supports the membrane without adding significantly to the overall height of the processor. The processor can be stacked in a two level processing system without requiring additional clean room space.

Abstract: An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.

Abstract: An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.

Abstract: An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Abstract: A substrate processor uses pressurized gas to create a vortex for lifting and holding a wafer, and to create a vacuum to prevent the wafer from adhering to a contact ring seal after electroplating the wafer. A processor head has a rotor movable into and out of an electrolyte vessel. A backing plate on the rotor includes vortex outlets which create the vortex in the rotor. A vacuum channel adjacent to the perimeter of the rotor applies vacuum to the wafer edges to hold the wafer onto the backing plate. A solenoid or switch in the head has a first position to supply gas flow to the vortex outlets, and a second position to supply gas flow to an aspirator which creates the vacuum in the vacuum channel.

Abstract: A detection fixture is provided with a processor for electroplating a substrate such as a semiconductor wafer, to detect the level of electrolyte in a bowl of the processor. The detected electrolyte level is used in controlling entry of the substrate into the electrolyte, to achieve desired electrolyte wetting characteristics. The processor has a substrate holder supported on a lifter for lowering the substrate holder into the bowl. The detection fixture may emulate a substrate and be held by the substrate holder in the same way that the substrate holder holds a substrate. The lifter lowers the detection fixture until it makes contact with the electrolyte, with the position of the fixture indicative the electrolyte level. The detection fixture is then removed from the processor.

Abstract: An electroplating processor includes a thin lower membrane support for supporting a membrane. The lower membrane support may be provided as a flexible plastic sheet having a pattern of through-openings. The through-openings may be aligned with openings in a rigid upper membrane support. The perimeter of the lower membrane may be clamped in the same perimeter seal as used to clamp and seal the perimeter of the membrane. The lower membrane support supports the membrane without adding significantly to the overall height of the processor. The processor can be stacked in a two level processing system without requiring additional clean room space.