Abstract: The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.

Abstract: An on-chip amplifier includes first element that curtails the velocity of an incoming light to the amplifier. A second element is doped so as to make the frequency of the incoming light equal to the electron frequency in order to allow for electron-photon wave interaction, so that when current flows through the amplifier, electron power is transferred to the incoming light, resulting in amplification of the incoming light.

Abstract: The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.

Abstract: A microphotonic light source includes an optical pump and a plurality of waveguides that distribute optical pump power of the optical pump. At least one Erbium-doped laser ring is coupled to at least one of the waveguides so as to match the resonance condition of the optical pump.

Abstract: The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

Abstract: An on-chip amplifier includes first element that curtails the velocity of an incoming light to the amplifier. A second element is doped so as to make the frequency of the incoming light equal to the electron frequency in order to allow for electron-photon wave interaction, so that when current flows through the amplifier, electron power is transferred to the incoming light, resulting in amplification of the incoming light.