Patents by Inventor Daniel M. Kinzer
Daniel M. Kinzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10897142Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.Type: GrantFiled: June 20, 2019Date of Patent: January 19, 2021Assignee: NAVITAS SEMICONDUCTOR LIMITEDInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10868165Abstract: A gallium nitride transistor includes a substrate on which a source region, a drain region, a drift region and a gate region are defined. The drift region extends between the source region and the drain region. The gate region includes a combination of enhancement-mode and depletion-mode devices that are positioned across the drift region and are used together to control charge density and mobility of electrons in the drift region with a relatively low threshold voltage (Vth). Enhancement-mode devices are formed using a P-type layer disposed on the substrate and coupled to a gate electrode.Type: GrantFiled: April 23, 2019Date of Patent: December 15, 2020Assignee: NAVITAS SEMICONDUCTOR LIMITEDInventors: Pil Sung Park, Maher J. Hamdan, Santosh Sharma, Daniel M. Kinzer
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Patent number: 10847644Abstract: A gallium nitride transistor includes one or more P-type hole injection structures that are positioned between the gate and the drain. The P-type hole injection structures are configured to inject holes in the transistor channel to combine with trapped carriers (e.g., electrons) so the electrical conductivity of the channel is less susceptible to previous voltage potentials applied to the transistor.Type: GrantFiled: April 23, 2019Date of Patent: November 24, 2020Assignee: NAVITAS SEMICONDUCTOR LIMITEDInventors: Daniel M. Kinzer, Maher J. Hamdan
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Publication number: 20200212804Abstract: An electronic circuit is disclosed. The electronic circuit includes a distributed power switch. In some embodiments, the electronic circuit also includes one or more of a distributed gate driver, a distributed gate pulldown device, a distributed diode, and a low resistance gate and/or source connection structure. An electronic component comprising the circuit, and methods of manufacturing the circuit are also disclosed.Type: ApplicationFiled: March 9, 2020Publication date: July 2, 2020Applicant: Navitas Semiconductor, Inc.Inventor: Daniel M. Kinzer
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Publication number: 20200099241Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: November 28, 2019Publication date: March 26, 2020Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10587194Abstract: An electronic circuit is disclosed. The electronic circuit includes a distributed power switch. In some embodiments, the electronic circuit also includes one or more of a distributed gate driver, a distributed gate pulldown device, a distributed diode, and a low resistance gate and/or source connection structure. An electronic component comprising the circuit, and methods of manufacturing the circuit are also disclosed.Type: GrantFiled: August 20, 2015Date of Patent: March 10, 2020Assignee: NAVITAS SEMICONDUCTOR, INC.Inventor: Daniel M. Kinzer
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Publication number: 20190386503Abstract: An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.Type: ApplicationFiled: August 25, 2019Publication date: December 19, 2019Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Zhang
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Publication number: 20190326427Abstract: A gallium nitride transistor includes one or more P-type hole injection structures that are positioned between the gate and the drain. The P-type hole injection structures are configured to inject holes in the transistor channel to combine with trapped carriers (e.g., electrons) so the electrical conductivity of the channel is less susceptible to previous voltage potentials applied to the transistor.Type: ApplicationFiled: April 23, 2019Publication date: October 24, 2019Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Maher J. Hamdan
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Publication number: 20190326426Abstract: A gallium nitride transistor includes a substrate on which a source region, a drain region, a drift region and a gate region are defined. The drift region extends between the source region and the drain region. The gate region includes a combination of enhancement-mode and depletion-mode devices that are positioned across the drift region and are used together to control charge density and mobility of electrons in the drift region with a relatively low threshold voltage (Vth). Enhancement-mode devices are formed using a P-type layer disposed on the substrate and coupled to a gate electrode.Type: ApplicationFiled: April 23, 2019Publication date: October 24, 2019Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Pil Sung Park, Maher J. Hamdan, Santosh Sharma, Daniel M. Kinzer
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Publication number: 20190319471Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.Type: ApplicationFiled: June 20, 2019Publication date: October 17, 2019Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10355475Abstract: A gallium-nitride based power transistor is coupled to a voltage source that has transient overvoltage conditions exceeding the allowable withstanding voltage of the power transistor. An overvoltage protection circuit is coupled to the power transistor to temporarily turn on the power transistor during the overvoltage condition to protect the power transistor from overvoltage breakdown.Type: GrantFiled: August 14, 2015Date of Patent: July 16, 2019Assignee: NAVITAS SEMICONDUCTOR, INC.Inventor: Daniel M. Kinzer
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Patent number: 10135275Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: July 25, 2016Date of Patent: November 20, 2018Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9985626Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.Type: GrantFiled: January 29, 2016Date of Patent: May 29, 2018Assignee: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Ju Jason Zhang
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Patent number: 9960154Abstract: A semiconductor device is disclosed. The device includes a substrate including GaN, a two dimensional electron gas (2DEG) inducing layer on the substrate, and a lateral transistor on the 2DEG inducing layer. The lateral transistor includes source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a field plate between the gate and the drain contact. The device also includes one or more insulation layers on the 2DEG inducing layer, where the field plate is spaced apart from the 2DEG inducing layer by the insulation layers, and a conductor on the insulation layers, where a first portion of the conductor is spaced apart from the 2DEG inducing layer by the insulation layers by a distance less than 200 nm.Type: GrantFiled: September 17, 2015Date of Patent: May 1, 2018Assignee: Navitas Semiconductor, Inc.Inventor: Daniel M. Kinzer
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Patent number: 9960620Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: May 1, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9859732Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: January 2, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20170222644Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.Type: ApplicationFiled: January 29, 2016Publication date: August 3, 2017Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Ju Jason Zhang
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Patent number: 9716395Abstract: An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage.Type: GrantFiled: June 11, 2015Date of Patent: July 25, 2017Assignee: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9685869Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: November 23, 2016Date of Patent: June 20, 2017Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9647476Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: May 9, 2017Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang