Abstract: Processor-implemented techniques for verifying ESD device connectivity in an IC include the steps of: receiving an input dataset including layout parameters corresponding to the integrated circuit; identifying ESD devices based at least in part on the input dataset; extracting devices and parasitic elements in at least a portion of the integrated circuit based at least in part on the input dataset; generating a file including connectivity information and dimensional characteristics for extracted devices and parasitic elements associated with at least the identified ESD devices in the integrated circuit; identifying at least one ESD test based on the identified ESD devices and on connectivity to the identified ESD devices; and performing a linear network analysis for each identified ESD test based at least in part on the file.

Abstract: Computer-implemented techniques for verifying ESD device connectivity in an IC include the steps of: receiving an input dataset including layout parameters corresponding to the integrated circuit; identifying ESD devices based at least in part on the input dataset; extracting devices and parasitic elements in at least a portion of the integrated circuit based at least in part on the input dataset; generating a file including connectivity information and dimensional characteristics for extracted devices and parasitic elements associated with at least ESD protection circuitry in the integrated circuit; identifying at least one ESD test based on the identified ESD devices and on connectivity to the respective ESD devices; and performing a linear network analysis for each identified ESD test based at least in part on the netlist evaluated under ESD conditions, the identified ESD devices being removed from the network analysis, the network analysis being used to ensure that current densities through respective con

Abstract: A method for manufacturing a semiconductor wafer uses a reticle having a plurality of spaced apart circuit images of identical patterns or images of a common level of a single integrated circuit formed on the reticle and arranged in columns and rows about its central point. At least one column of spaced apart test images are formed outside of and adjacent an outermost column of circuit images. Radiation is projected through the reticle for exposing the patterns on the reticle onto an underlying wafer. A reticle holder having a pair of shutter elements aligned parallel to the columns of images selectively blocks the projection of radiation through the columns of the test images but are exposed in order to form test circuits on the wafer at selected locations.

Abstract: A method for manufacturing a semiconductor wafer uses a reticle having a plurality of spaced apart circuit images of identical patterns or images of a common level of a single integrated circuit formed on the reticle and arranged in columns and rows about its central point. At least one column of spaced apart test images are formed outside of and adjacent an outermost column of circuit images. Radiation is projected through the reticle for exposing the patterns on the reticle onto an underlying wafer. A reticle holder having a pair of shutter elements aligned parallel to the columns of images selectively blocks the projection of radiation through the columns of the test images but are exposed in order to form test circuits on the wafer at selected locations.

Abstract: A novel capacitor design for use in semiconductor integrated circuits is disclosed. The capacitor includes a metal-dielectric-metal stack formed within a window and upon a conductive substrate. Contact to the top plate of the capacitor is through a window within a window, while contact to the bottom plate is achieved by a guard ring which contacts the conductive substrate.

Abstract: Linewidth control features having integral transistors are disclosed. Optical and electrical measurements of the linewidth control feature and its associated transistor may be correlated thereby providing a method of improving production processes.