Patents by Inventor Daniel MATEJA

Daniel MATEJA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP compositions and methods for selective removal of silicon nitride
    Patent number: 9850402
    Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: December 26, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Dmitry Dinega, Sairam Shekhar, Renhe Jia, Daniel Mateja
  • Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
    Patent number: 9303187
    Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: April 5, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Dimitry Dinega, Kevin Moeggenborg, William Ward, Daniel Mateja
  • CMP COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF SILICON NITRIDE
    Publication number: 20150159046
    Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.
    Type: Application
    Filed: December 9, 2013
    Publication date: June 11, 2015
    Inventors: Dmitry DINEGA, Sairam SHEKHAR, Renhe JIA, Daniel Mateja
  • Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials
    Publication number: 20150024595
    Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.
    Type: Application
    Filed: July 22, 2013
    Publication date: January 22, 2015
    Inventors: Dimitry Dinega, Kevin Moeggenborg, William Ward, Daniel Mateja
  • CMP compositions selective for oxide and nitride with high removal rate and low defectivity
    Patent number: 8916061
    Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: December 23, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Michael Willhoff, Daniel Mateja
  • CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY
    Publication number: 20130244432
    Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.
    Type: Application
    Filed: March 13, 2013
    Publication date: September 19, 2013
    Inventors: Brian REISS, Michael WILLHOFF, Daniel MATEJA