Abstract: A semiconductor strip array that can be configured to exhibit distinct electrical and/or magnetic phase characteristics according to the many-body effects phenomenon in electron gases is disclosed. The strip array can be incorporated into a MOSFET architecture and utilized in amplifier and memory cell applications. Significantly, the strip array can exhibit superconductive characteristics under relatively high temperature conditions. In one embodiment, the strip array comprises a grounded substrate, a plurality of strips deposited on the substrate in an intersecting pattern to define the strip array, an insulating layer atop the array, a source, and a drain. The intersecting strip array defines primary electron trapping sites at the strip intersections and secondary electron trapping sites on the strips between the intersections.

Abstract: Nanostructures are provided having electronic properties suitable for artificial ferromagnetism or anti-ferromagnetism in semiconducting arrays. An artificial ferromagnet device comprises an insulator substrate, and a semiconductor material over the insulator substrate. The semiconductor material has a bipartite architecture comprising interconnected, nonmagnetic nanodots organized into a plurality of cells in a trellis structure in which there is one electron per nanodot. Similarly, a nano-logical memory element comprises an insulator substrate, and a semiconductor material over the insulator substrate. The semiconductor material has a bipartite architecture comprising interconnected, nonmagnetic nanodots with a given electron concentration. A method is also provided for insulator-to-metallic transition that allows for signal and power amplification when a semiconductor array is imbedded in MOSFET geometry.