Abstract: The disclosure relates to a semiconductor die and a method for manufacturing the semiconductor die. The semiconductor includes: a semiconductor body having an active region with a p-channel device formed in the active region; an insulation layer formed on the semiconductor body; and a sodium stopper formed in the insulation layer and arranged laterally between the active region and a lateral edge of the semiconductor die. The sodium stopper has an insulation layer groove which intersects the insulation layer vertically and extends around the active region. The insulation layer groove is filled with a diffusion barrier material.

Abstract: A parameter sensor for an agricultural sprayer is mounted to an applicator and configured to determine liquid parameters of the liquid flowing through the spray nozzle. The parameter sensing module includes one or both of a flow meter and a pressure sensor. The parameter sensor includes sensor circuitry configured to determine a flow rate based on data generated by the flow meter and determine a liquid pressure based on data generated by the pressure sensor.

Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

Abstract: In an embodiment, a semiconductor wafer includes a front surface, a plurality of active component positions, and at least one composite alignment mark arranged on the front surface and indicating a unique orientation of the semiconductor wafer. The composite alignment mark includes a first portion that has at least one raised section formed of a first material and a second portion that is positioned laterally adjacent the first portion. The second portion has at least one raised section formed of a second material that is different form the first material.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface over which a plurality of die pads and at least one alignment pad for optical process control for semiconductor wafer probing are arranged. The alignment pad has a hardness smaller than a hardness of the plurality of die pads.

Abstract: Anti-CCHFV antibodies with neutralizing potency and protective efficacy against CCHFV are provided, as well as methods for their identification, isolation, generation, and methods for their preparation and use are provided.

Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

Abstract: Anti-CCHFV antibodies with neutralizing potency and protective efficacy against CCHFV are provided, as well as methods for their identification, isolation, generation, and methods for their preparation and use are provided.

Abstract: An item of furniture, such as a bench, cabinet, desk, chest or sideboard, having an appearance suitable to be located near the door of a home, contains integrated within it a disinfection chamber suitable for disinfecting home-delivery packages. The disinfection chamber may use disinfecting light or ozonated air or both.

Abstract: The invention provides a compound of formula (I) or a salt thereof, wherein R1, R2, R3 and R4 have any of the values described in the specification, as well as compositions comprising a compound of formula (I). The compounds are useful as immunostimulatory agents.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface over which a plurality of die pads and at least one alignment pad for optical process control for semiconductor wafer probing are arranged. The alignment pad has a hardness smaller than a hardness of the plurality of die pads.

Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Abstract: A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Abstract: A method for processing a sacrificial material of an intermediate microfabricated product includes forming a hydrogen-containing carbon layer on a surface of a base structure and releasing hydrogen from the hydrogen-containing carbon layer to obtain a hydrogen-released (i.e., densified) carbon layer with low shrink. The method further includes forming a structural layer on at least a portion of a surface of the hydrogen-released carbon layer, and oxidizing the hydrogen-released (densified) carbon layer to release the structural layer. In this manner, a cavity is formed between the base structure and the structural layer. The ashing of the hydrogen-released carbon layer leaves substantially no residues within the cavity of the intermediate or final microfabricated product. Further embodiments provide a method for manufacturing a microfabricated product, to an intermediate microfabricated product, and to a microfabrication equipment.