Abstract: High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

Abstract: The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors are preserved during heating (e.g., subsequent LPE regrowth) by a thin coating containing a transition metal (e.g., Os, Ru or Rh). DFP-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.

Abstract: High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

Abstract: The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors are preserved during heating (e.g., subsequent LPE regrowth) by a thin coating containing a transition metal (e.g., Os, Ru and Rh). DFB-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.

Abstract: A buried-heterostructure distributed feedback laser is described, including a grating structure at a surface of a nonplanar cladding layer. The grating structure can be made by transfer of a pattern by ion milling, the pattern being defined in an ion-beam resist layer, e.g., by direct-writing electron-beam exposure. Low-threshold, high-power lasers are obtained with a commercially favorable yield.

Abstract: High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

Abstract: V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers.

Abstract: Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs.