Patents by Inventor Daniel Ping Peng

Daniel Ping Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Film-growth model using level sets
    Patent number: 9547233
    Abstract: A technique for determining a set of surface profiles in a multilayer stack during a fabrication process may be determined using a model of this fabrication process, a geometry of the multilayer stack (such as a pre-defined geometry of the multilayer stack) and a surface profile in the multilayer stack (such as a measured surface profile of the top surface or a bottom surface of the multilayer stack). For example, the model of the fabrication process may be based on a generalized Eikonal equation. In conjunction with deposition rates and/or physical properties of the layers in the multilayer stack, deposition or growth of the multilayer stack may be simulated. Based on the determined set of surface profiles, an acceptance condition of the multilayer stack (such as a multilayer stack in a photo-mask for use in extreme ultra-violet photolithography) may be determined and/or a remedial action may be recommended.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: January 17, 2017
    Assignee: KLA-Tencor Corporation
    Inventors: Daniel Ping Peng, Masaki Satake, Changqing Hu
  • Film-Growth Model Using Level Sets
    Publication number: 20140278231
    Abstract: A technique for determining a set of surface profiles in a multilayer stack during a fabrication process may be determined using a model of this fabrication process, a geometry of the multilayer stack (such as a pre-defined geometry of the multilayer stack) and a surface profile in the multilayer stack (such as a measured surface profile of the top surface or a bottom surface of the multilayer stack). For example, the model of the fabrication process may be based on a generalized Eikonal equation. In conjunction with deposition rates and/or physical properties of the layers in the multilayer stack, deposition or growth of the multilayer stack may be simulated. Based on the determined set of surface profiles, an acceptance condition of the multilayer stack (such as a multilayer stack in a photo-mask for use in extreme ultra-violet photolithography) may be determined and/or a remedial action may be recommended.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Applicant: Dino Technology Acquisition LLC
    Inventors: Daniel Ping Peng, Masaki Satake, Changqing Hu