Abstract: The invention relates to prokaryotic cells for the production of polymers containing non-canonical amino acids, and to methods for making said cells. The invention also relates to newly obtainable polymers as produced by the cells of the invention. In addition, the invention relates to new orthogonal aminoacyl-tRNA synthetases (aaRSs) and orthogonal tRNAs, which may be used in pairs and find utility in host cells such as, but not limited to, the prokaryotic cells of the invention.

Abstract: The invention relates to prokaryotic cells for the production of polymers containing non-canonical amino acids, and to methods for making said cells. The invention also relates to newly obtainable polymers as produced by the cells of the invention. In addition, the invention relates to new orthogonal aminoacyl-tRNA synthetases (aaRSs) and orthogonal tRNAs, which may be used in pairs and find utility in host cells such as, but not limited to, the prokaryotic cells of the invention.

Abstract: A ceramic plate capable of luminescing under electron X-ray or other ionizing radiation comprises a fine powder bound in water glass such as sodium or potassium hydroxy silicates, or sodium or potassium borates. The powder is typically less than 50 .mu.m mean particle size e.g. 10 .mu.m size. Powder material includes: calcium borate, yttrium aluminate, zinc yttrium silicate, calcium silicate, germanate, Magnesium borate, Barium borate, strontium borate. Dopant materials may be Tb, Tm, Ce, Eu, Pr, Yb, Mn, Cu, Ag, Pb added in amounts up to 15% weight or more. The plate is formed by mixing powder and water glass into a dough. The dough is pressed in a mould to remove excess water glass and fired at about 950.degree. C. for about 8 hours. Alternatively excess water is used when mixing powder and water glass. This excess water is allowed to evaporate while the plate is in a mould prior to pressing and firing.

Abstract: A semiconductor device (1) including a monocrystalline region of semiconductor grey tin material (5) in intimate contact with a monocrystalline substrate (3). The region of semiconductor tin (5) is stabilized by interaction with the monocrystalline substrate (3) which has a crystallographic structure isomorphous with the structure of grey tin and an interatomic spacing matched to the interatomic spacing of the semiconductor region (5). The semiconductor region (5) may be further stabilized by inclusion of germanium dopant. The matching substrate (3) may be of indium antimonide, cadmium telluride, germanium or silicon material. Ohmic contact between a region of semiconductor tin (5) and a region of metal white tin (15) may be formed. Details of infra-red photovoltaic and photoconductive devices are given.The semiconductor region of tin may be grown by molecular beam epitaxy.