Abstract: CMOS image sensor with a rolling shutter that uses two separate clocks. One of the clocks is used during normal operation. When timing is changed, the other clock is started and used during an interim period to avoid distortion in the image. After that interim period, the new clock timing is coupled to the original clock circuit.

Abstract: An electronic imaging sensor, which has an improved immunity to noise caused by unwanted x-rays, images an object by collecting charge carriers produced in the sensor when the object is exposed to x-rays. One or more shielding areas are formed proximate the sensor to capture or sweep away any undesirable charge carriers generated by the unwanted x-rays. The shielding areas extend deeper beneath the surface of the sensor than the depth at which the desired charge carriers corresponding to the object being imaged is collected. The shielding areas capture charge carriers formed by the unwanted x-rays, which penetrate into the sensor to a greater depth than the depth at which the desired charge carriers are collected. In this way, the undesirable charge carriers are captured near the region where they are generated and before they migrate towards the surface where they can be collected and manifest as noise in the resulting image of the object.

Abstract: CMOS image sensor with a rolling shutter that uses two separate clocks. One of the clocks is used during normal operation. When timing is changed, the other clock is started and used during an interim period to avoid distortion in the image. After that interim period, the new clock timing is coupled to the original clock circuit.

Abstract: A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking region, a second blocking region and a photosensitive region formed on the semiconductor substrate. The first blocking region is formed between neighboring photosensitive regions aligned in a vertical direction. The second blocking region is formed between neighboring photosensitive regions aligned in a horizontal direction. Free electrons produced by illuminating the photosensitive units are blocked by the first and the second blocking regions.

Abstract: An electronic imaging sensor, which has an improved immunity to noise caused by unwanted x-rays, images an object by collecting charge carriers produced in the sensor when the object is exposed to x-rays. One or more shielding areas are formed proximate the sensor to capture or sweep away any undesirable charge carriers generated by the unwanted x-rays. The shielding areas extend deeper beneath the surface of the sensor than the depth at which the desired charge carriers corresponding to the object being imaged is collected. The shielding areas capture charge carriers formed by the unwanted x-rays, which penetrate into the sensor to a greater depth than the depth at which the. desired charge carriers are collected. In this way, the undesirable charge carriers are captured near the region where they are generated and before they migrate towards the surface where they can be collected and manifest as noise in the resulting image of the object.

Abstract: A dual slope A/D converter uses two opposite sense ramps added to its differential input. The value in a digital counter is latched at the time when the two ramps intersect. This enables a more consistent switching point, allowing the amplifier to the linear over a larger part of its range.

Abstract: A dual slope A/D converter uses two opposite sense ramps added to its differential input. The value in a digital counter is latched at the time when the two ramps intersect. This enables a more consistent switching point, allowing the amplifier to the linear over a larger part of its range.

Abstract: An image sensor and offset-able reference voltage generator thereof are provided. The image sensor comprises a plurality of pixels, an offset-able reference voltage generator and a pixel sampling circuit. The pixel senses light from an image and generate an image signal. The offset-able reference voltage generator provides a reference voltage having a voltage offset. The pixel sampling circuit is coupled to the pixels and the offset-able reference voltage generator to sample the image signal and generate a pixel signal according to the reference voltage. The voltage offset of the reference voltage is able to compensate for the offset voltage in the process of generating the pixel signals.

Abstract: A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking region, a second blocking region and a photosensitive region formed on the semiconductor substrate. The first blocking region is formed between neighboring photosensitive regions aligned in a vertical direction. The second blocking region is formed between neighboring photosensitive regions aligned in a horizontal direction. Free electrons produced by illuminating the photosensitive units are blocked by the first and the second blocking regions.

Abstract: A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking region, a second blocking region and a photosensitive region formed on the semiconductor substrate. The first blocking region is formed between neighboring photosensitive regions aligned in a vertical direction. The second blocking region is formed between neighboring photosensitive regions aligned in a horizontal direction. Free electrons produced by illuminating the photosensitive units are blocked by the first and the second blocking regions.

Abstract: A circuit and method thereof for sampling/holding signal is provided. The signal sampling/holding circuit comprises a first signal sampling/holding device, a second signal sampling/holding device, a target signal and a reference voltage. First, the first signal sampling/holding device is supplied with the reference voltage and the target signal. The reference voltage is disconnected from the first signal sampling/holding device before the target signal is. Similarly, the reference voltage is disconnected from the second signal sampling/holding device before the target signal is. Thus the target signal is respectively sampled and held in the first signal sampling/holding device and the second signal sampling/holding device.

Abstract: An electronic imaging sensor, which has an improved immunity to noise caused by unwanted x-rays, images an object by collecting charge carriers produced in the sensor when the object is exposed to x-rays. One or more shielding areas are formed proximate the sensor to capture or sweep away any undesirable charge carriers generated by the unwanted x-rays. The shielding areas extend deeper beneath the surface of the sensor than the depth at which the desired charge carriers corresponding to the object being imaged is collected. The shielding areas capture charge carriers formed by the unwanted x-rays, which penetrate into the sensor to a greater depth than the depth at which the. desired charge carriers are collected. In this way, the undesirable charge carriers are captured near the region where they are generated and before they migrate towards the surface where they can be collected and manifest as noise in the resulting image of the object.

Abstract: A reference voltage generator for use in an image sensor provides a reference voltage to an S/H block during a pixel read-out operation and another reference voltage to an analog-to-digital converter (ADC) during a digitization operation. The reference voltage generator includes a variable voltage generator, a sample-and-hold circuit to sample a reference voltage prior to the pixel read-out operation or the digitization operation, and a buffer amplifier to drive the appropriate reference voltage to the relatively high impedance load presented by the S/H block and the variable impedance load provided by the ADC.

Abstract: CMOS image sensor with a rolling shutter that uses two separate clocks. One of the clocks is used during normal operation. When timing is changed, the other clock is started and used during an interim period to avoid distortion in the image. After that interim period, the new clock timing is coupled to the original clock circuit.

Abstract: A circuit for generating a reference voltage of an image sensor is provided. The circuit comprises a signal differential amplifier, a gain amplifier, a source follower and a clamp circuit. The signal differential amplifier is adapted for receiving and comparing a bias voltage and the reference voltage, and outputting a first voltage according to a comparison result. The gain amplifier is coupled to the signal differential amplifier, and is adapted for receiving the first voltage and outputting a second voltage. The source follower, coupled to the gain amplifier, and is adapted for receiving the second voltage and outputting the reference voltage. The clamp circuit is coupled to the source follower, and is adapted for receiving the reference voltage and limiting the reference voltage to below a clamp voltage.

Abstract: A non-uniform resistor is used with a flash A to D converter in order to provide an A to D output which is not linear. The nonlinearity of the A to D output is specially designed to carry out a predetermined correction of the signal.

Abstract: A circuit and method thereof for sampling/holding signal is provided. The signal sampling/holding circuit comprises a first signal sampling/holding device, a second signal sampling/holding device, a target signal and a reference voltage. First, the first signal sampling/holding device is supplied with the reference voltage and the target signal. The reference voltage is disconnected from the first signal sampling/holding device before the target signal is. Similarly, the reference voltage is disconnected from the second signal sampling/holding device before the target signal is. Thus the target signal is respectively sampled and held in the first signal sampling/holding device and the second signal sampling/holding device.

Abstract: A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking region, a second blocking region and a photosensitive region formed on the semiconductor substrate. The first blocking region is formed between neighboring photosensitive regions aligned in a vertical direction. The second blocking region is formed between neighboring photosensitive regions aligned in a horizontal direction. Free electrons produced by illuminating the photosensitive units are blocked by the first and the second blocking regions.

Abstract: An image sensor and offset-able reference voltage generator thereof are provided. The image sensor comprises a plurality of pixels, an offset-able reference voltage generator and a pixel sampling circuit. The pixel senses light from an image and generate an image signal. The offset-able reference voltage generator provides a reference voltage having a voltage offset. The pixel sampling circuit is coupled to the pixels and the offset-able reference voltage generator to sample the image signal and generate a pixel signal according to the reference voltage. The voltage offset of the reference voltage is able to compensate for the offset voltage in the process of generating the pixel signals.

Abstract: A common operational amplifier for a pipeline circuit is provided. The common operational amplifier is used by the stage circuits of the pipeline circuit by turns according to a predetermined timing. The common operational amplifier comprises an operational amplifier circuit, a multiplexer circuit and a demultiplexer circuit. The multiplexer circuit is provided for selecting a signal set of a stage circuit to be amplified to couple to the operational amplifier circuit, and the demultiplexer circuit is provided for transmitting the amplified signal set to the corresponding stage circuit.