Abstract: A method for patterning a self-aligned coil using a damascene process is disclosed. Coil pockets are formed in a first insulation layer disposed over a first pole layer. A barrier/seed layer is deposited along walls of the coil pockets in the insulation layer. Copper is formed in the coil pockets and over the insulation layer. The copper is planarized down to the insulation layer. The self-aligned coil process packs more copper into the same coil pocket and relaxes the coil alignment tolerance. Protrusions are prevented because of the more efficient and uniform spacing of the coil to reduce heat buildup in the head during a write.

Abstract: A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure.