Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: Devices, methods, and systems for enclosures for an ion trapping device are described herein. One enclosure for an ion trapping device includes a heat spreader base that includes a perimeter portion and a center portion connected to the perimeter portion by a bridge portion, a grid array coupled to the heat spreader, a spacer with a plurality of studs coupled to the grid array, an interposer and ion trap die coupled to the spacer, a connector coupled to interposer, and a roof portion coupled to the heat spreader base.

Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: An apparatus and method for an alignment cell are described herein. One apparatus includes a delivery fiber and a delivery lens coupled to an optical bench, a mirror to receive light from the delivery fiber through the delivery lens, wherein the received light is directed by the mirror to an ion trap on the trap surface, and a collection fiber coupled to the optical bench to receive light fluoresced from an ion in the ion trap.

Abstract: An apparatus and method for an alignment cell are described herein. One apparatus includes a delivery fiber and a delivery lens coupled to an optical bench, a mirror to receive light from the delivery fiber through the delivery lens, wherein the received light is directed by the mirror to an ion trap on the trap surface, and a collection fiber coupled to the optical bench to receive light fluoresced from an ion in the ion trap.

Abstract: Devices, methods, and systems for trapping multiple ions are described herein. One device includes two or more ovens wherein each oven includes a heating element and a cavity for emitting atoms of a particular atomic species from an atomic source substance, a substrate having a number of apertures that allow atoms emitted from the atomic source substance to exit the oven and enter an ion trapping area and wherein each oven is positioned at a different ion loading area within the ion trapping area, and a plurality of electrodes that can be charged and wherein the charge can be used to selectively control the movement of a particular ion from a particular loading area to a particular ion trap location.

Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: Devices, systems, and methods for ion trapping with integrated electromagnets are described herein. One device includes a plurality of electrodes configured to trap an ion above a surface of the device, a medial coil and a plurality of peripheral coils, each positioned at a respective radial angle associated with the medial coil, wherein the medial coil is configured to generate a first magnetic field having a first orientation, and wherein the peripheral coils are configured to generate a second magnetic field having a second orientation that opposes the first orientation.

Abstract: Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.

Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: Methods, apparatuses, and systems for alignment of an optical component are described herein. One method includes forming a pit in a substrate, placing an optical component in the pit, and aligning the optical component such that an edge of the optical component is in physical contact with an alignment edge of the pit.

Abstract: Devices, systems, and methods for ion trapping with integrated electromagnets are described herein. One device includes a plurality of electrodes configured to trap an ion above a surface of the device, a medial coil and a plurality of peripheral coils, each positioned at a respective radial angle associated with the medial coil, wherein the medial coil is configured to generate a first magnetic field having a first orientation, and wherein the peripheral coils are configured to generate a second magnetic field having a second orientation that opposes the first orientation.

Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: Methods, apparatuses, and systems for design, fabrication, and use of an ion trap with variable pitch electrodes are described herein. One apparatus includes an ion trap and a plurality of variable pitch electrodes disposed on the ion trap. A respective electrode of the plurality of electrodes can have a first pitch in a first region of the trap and a second pitch in a second region of the trap.

Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Abstract: Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.

Abstract: Methods, apparatuses, and systems for design, fabrication, and use of an optical bench, as well as alignment and attachment of optical fibers are described herein. One apparatus includes an apparatus body, a first channel within the apparatus body for positioning of a first optical fiber directed along a first axis and a second channel within the apparatus body for positioning of a second optical fiber directed along a second axis, wherein the first axis is orthogonal to the second axis. The apparatus also includes a third optical fiber directed along the second axis and an optical element positioned along the first channel and second channel to focus a first light beam from the first optical fiber along the first axis and focus a second light beam from the second optical fiber along the second axis.

Abstract: Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.