Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: The high aspect ratio atomic force microscope (AFM) probe has a cantilever element with a crystalline growth surface at one end. The AFM probe additionally has a semiconductor nanowire extending substantially orthogonally from the growth surface. The AFM probe is made by covering the cantilever element with sacrificial material, leaving at least part of the growth surface exposed; depositing catalyst metal on the exposed growth surface; removing the sacrificial material leaving the catalyst metal on the growth surface, and growing a semiconductor nanowire extending from the growth surface using the catalyst metal left on the growth surface. The catalyst metal remains at the distal end of the nanowire during the growing.

Abstract: The present invention is directed to a substrate for use in detection of an analyte where the substrate includes an engineered surface having nanostructures and the analyte is labeled with nanoparticles. The substrate also includes at least one molecule having binding affinity for the nano-particle labeled analyte; wherein association of at least one nano-particle labeled analyte to at least one molecule on the engineered substrate causes a detectable change in resonant wavelength or intensity. The present invention also includes a kit comprising the above substrate and methods for use thereof.

Abstract: The present invention relates to a substrate including a nanoparticle lattice having uniform interparticle spacing. A system includes a nanoparticle lattice including a ordered pattern of individual nanoparticles, wherein the lattice nanoparticles are assembled by affinity binding.

Abstract: A technique for generating and detecting an EM signal in the THz range involves generating EM energy having multiple modes, selecting at least two of the modes of the EM energy to provide a multi-mode EM signal, subjecting the multi-mode EM signal to mixing, and isolating a beat signal component that results from the mixing. The spacing between adjacent ones of the selected modes, i.e., the frequency difference between the modes, is in the radio frequency (RF) or microwave frequency ranges. Signals in these ranges are commonly processed using electronic circuits at room temperature.

Abstract: Biosensors, methods, and systems for determining the presence of biomolecules using surface-enhanced Raman spectroscopy (SERS) are provided.

Abstract: A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.

Abstract: Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

Abstract: Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.