Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. In some embodiments, the structure further includes a metal nanoparticle array configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range. In some embodiments, the structure further includes a filter configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range, wherein the filter is configured such that a wavelength at which a minimum amount of light is passed by the filter shifts no more than 30 nm for light incident on the filter at angles between 0° and 60° relative to a normal to a major surface of the filter.

Abstract: Methods, systems and computer readable media for computing small particle size distributions of particles in a process stream comprising a sample dilute colloid. A reference matrix of pre-computed reference vectors is provided. Each reference vector represents a discrete particle size or particle size range of a particle size distribution of particles contained in a dilute colloid. Each reference vector represents a reference extinction spectrum over a predetermined wavelength range. A measurement vector representing a measured extinction spectrum of the sample particles in the sample colloid is provided, wherein the measured extinction spectrum has been spectrophotometrically measured over the wavelength range. The particle size distribution and particle concentrations of the particles in the sample colloid are determined using the reference matrix, the measurement vector and linear equations.

Abstract: A technique for generating and detecting an EM signal in the THz range involves generating EM energy having multiple modes, selecting at least two of the modes of the EM energy to provide a multi-mode EM signal, subjecting the multi-mode EM signal to mixing, and isolating a beat signal component that results from the mixing. The spacing between adjacent ones of the selected modes, i.e., the frequency difference between the modes, is in the radio frequency (RF) or microwave frequency ranges. Signals in these ranges are commonly processed using electronic circuits at room temperature.

Abstract: Methods, systems and computer readable media for computing small particle size distributions. A reference matrix of pre-computed reference vectors is provided, with each reference vector representing a discrete particle size or particle size range of a particle size distribution of particles contained in a dilute colloid. A measurement vector of measured extinction values of a sample dilute colloid is provided, wherein the measured extinction values have been measured by spectrophotometric measurement at the discrete wavelengths. Size distribution and concentrations of particles in the sample dilute colloid are determined using linear equations, the reference matrix and the reference vector.

Abstract: Methods, systems and computer readable media for computing small particle size distributions of particles in a process stream comprising a sample dilute colloid. A reference matrix of pre-computed reference vectors is provided. Each reference vector represents a discrete particle size or particle size range of a particle size distribution of particles contained in a dilute colloid. Each reference vector represents a reference extinction spectrum over a predetermined wavelength range. A measurement vector representing a measured extinction spectrum of the sample particles in the sample colloid is provided, wherein the measured extinction spectrum has been spectrophotometrically measured over the wavelength range. The particle size distribution and particle concentrations of the particles in the sample colloid are determined using the reference matrix, the measurement vector and linear equations.

Abstract: Methods, systems and computer readable media for computing small particle size distributions. A reference matrix of pre-computed reference vectors is provided, with each reference vector representing a discrete particle size or particle size range of a particle size distribution of particles contained in a dilute colloid. A measurement vector of measured extinction values of a sample dilute colloid is provided, wherein the measured extinction values have been measured by spectrophotometric measurement at the discrete wavelengths. Size distribution and concentrations of particles in the sample dilute colloid are determined using linear equations, the reference matrix and the reference vector.

Abstract: A scanning probe microscopy (SPM) probe functionalized for use in molecular recognition imaging comprises a cantilever element, a nanowire, a catalyst nanoparticle, a probe molecule and an elongate, flexible linking molecule. The cantilever element has a crystalline growth surface at one end. The nanowire extends substantially orthogonally from the growth surface. The catalyst nanoparticle is located at the distal end of the nanowire, remote from the growth surface. The linking molecule extends between the catalyst nanoparticle and the probe molecule.

Abstract: Biosensors, methods, and systems for determining the presence of biomolecules using surface-enhanced Raman spectroscopy (SERS) are provided.

Abstract: A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.