Patents by Inventor Danny Dynka
Danny Dynka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7838084Abstract: The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.Type: GrantFiled: July 20, 2006Date of Patent: November 23, 2010Assignee: Micron Technology, Inc.Inventors: Garo J. Derderian, Shuang Meng, Danny Dynka
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Patent number: 7585371Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.Type: GrantFiled: April 8, 2004Date of Patent: September 8, 2009Assignee: Micron Technology, Inc.Inventors: Eric R. Blomiley, Nirmal Ramaswamy, Ross S. Dando, Joel A. Drewes, Danny Dynka
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Patent number: 7431966Abstract: The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.Type: GrantFiled: December 9, 2003Date of Patent: October 7, 2008Assignee: Micron Technology, Inc.Inventors: Garo J. Derderian, Shuang Meng, Danny Dynka
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Patent number: 7427425Abstract: Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.Type: GrantFiled: September 1, 2004Date of Patent: September 23, 2008Assignee: Micron Technology, Inc.Inventors: Craig M. Carpenter, Ross S. Dando, Danny Dynka
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Patent number: 7335396Abstract: Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a mass flow rate in a passageway in response to a first condition by modulating a valve of a mass flow and pressure control unit, and controlling a pressure in the passageway in response to a second condition different than the first condition by modulating the valve of the mass flow and pressure control unit. In another embodiment, an apparatus includes a mass flow measurement device, a pressure sensor, a modulating valve in the passageway, and a controller operably coupled to the mass flow measurement device, the pressure sensor, and the modulating valve. The controller has a computer-readable medium containing instructions to perform the above-mentioned method.Type: GrantFiled: April 24, 2003Date of Patent: February 26, 2008Assignee: Micron Technology, Inc.Inventors: Craig M. Carpenter, Danny Dynka
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Publication number: 20070087576Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.Type: ApplicationFiled: November 17, 2006Publication date: April 19, 2007Inventors: Eric Blomiley, Nirmal Ramaswamy, Ross Dando, Joel Drewes, Danny Dynka
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Publication number: 20060257584Abstract: The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.Type: ApplicationFiled: July 20, 2006Publication date: November 16, 2006Inventors: Garo Derderian, Shuang Meng, Danny Dynka
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Publication number: 20060251815Abstract: The invention includes atomic layer deposition methods and apparatus.Type: ApplicationFiled: July 11, 2006Publication date: November 9, 2006Inventors: Kevin Hamer, Philip Campbell, Danny Dynka, Matthew Meyers
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Publication number: 20060243209Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.Type: ApplicationFiled: May 31, 2006Publication date: November 2, 2006Inventors: Eric Blomiley, Nirmal Ramaswamy, Ross Dando, Joel Drewes, Danny Dynka
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Publication number: 20060243208Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.Type: ApplicationFiled: May 31, 2006Publication date: November 2, 2006Inventors: Eric Blomiley, Nirmal Ramaswamy, Ross Dando, Joel Drewes, Danny Dynka
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Publication number: 20060216945Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.Type: ApplicationFiled: May 31, 2006Publication date: September 28, 2006Inventors: Eric Blomiley, Nirmal Ramaswamy, Ross Dando, Joel Drewes, Danny Dynka
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Publication number: 20060019029Abstract: The invention includes atomic layer deposition methods and apparatus.Type: ApplicationFiled: July 20, 2004Publication date: January 26, 2006Inventors: Kevin Hamer, Philip Campbell, Danny Dynka, Matthew Meyers
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Publication number: 20050223994Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.Type: ApplicationFiled: April 8, 2004Publication date: October 13, 2005Inventors: Eric Blomiley, Nirmal Ramaswamy, Ross Dando, Joel Drewes, Danny Dynka
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Patent number: 6926775Abstract: Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.Type: GrantFiled: February 11, 2003Date of Patent: August 9, 2005Assignee: Micron Technology, Inc.Inventors: Craig M. Carpenter, Ross S. Dando, Danny Dynka
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Publication number: 20050123690Abstract: The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.Type: ApplicationFiled: December 9, 2003Publication date: June 9, 2005Inventors: Garo Derderian, Shuang Meng, Danny Dynka
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Publication number: 20050028734Abstract: Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.Type: ApplicationFiled: September 1, 2004Publication date: February 10, 2005Inventors: Craig Carpenter, Ross Dando, Danny Dynka
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Publication number: 20040226507Abstract: Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a mass flow rate in a passageway in response to a first condition by modulating a valve of a mass flow and pressure control unit, and controlling a pressure in the passageway in response to a second condition different than the first condition by modulating the valve of the mass flow and pressure control unit. In another embodiment, an apparatus includes a mass flow measurement device, a pressure sensor, a modulating valve in the passageway, and a controller operably coupled to the mass flow measurement device, the pressure sensor, and the modulating valve. The controller has a computer-readable medium containing instructions to perform the above-mentioned method.Type: ApplicationFiled: April 24, 2003Publication date: November 18, 2004Inventors: Craig M. Carpenter, Danny Dynka
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Publication number: 20040154538Abstract: Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.Type: ApplicationFiled: February 11, 2003Publication date: August 12, 2004Inventors: Craig M. Carpenter, Ross S. Dando, Danny Dynka
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Patent number: 6533632Abstract: A method of evacuating and sealing the space between the baseplate and the faceplate of a field emission display. A frit bead is formed around the perimeter of the baseplate, and is then heated to a temperature at which a plurality of surface irregularities are formed on the surface of the bead. After the faceplate is placed on top of the frit bead, the panels are placed in a vacuum, and the space between the plates is evacuated through gaps in the frit bead formed by the surface irregularities. After the space between the plates has been evacuated, the frit bead is heated to a temperature that is high enough to allow the frit to at least partially flow. A compressive force applied between the plates compresses the frit bead, thereby bonding the frit bead to the plates. The plates are then allowed to cool before removing the plates from the vacuum.Type: GrantFiled: February 18, 1999Date of Patent: March 18, 2003Assignee: Micron Technology, Inc.Inventor: Danny Dynka
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Patent number: 6420828Abstract: Faceplates for field emission displays having novel cathodoluminescent layers are disclosed. In one embodiment, a faceplate includes a cathodoluninescent layer exposed to electrons (scrubbed) in a vacuum, the electron's having a current density of greater than one hundred microamperes per square centimeter. The cathodoluninescent layer may be reversibly darkened by the scrubbing. In one alternate aspect, the cathodoluninescent layers are irradiated with an electron beam having a duty cycle duty cycle of between ten and one hundred percent. In alternate aspects, an accelerating voltage may be maintained between the cathodoluminescent layer and a source of electrons, and the accelerating voltage may be dithered to treat the cathodoluminescent layer to varying depths. Significantly, the scrubbed faceplate has significantly enhanced performance and increased usefull life compared to faceplates that have not been scrubbed.Type: GrantFiled: September 19, 2001Date of Patent: July 16, 2002Assignee: Micron Technology, Inc.Inventors: Charles M. Watkins, Danny Dynka