Abstract: The present invention is directed to a built-in solution for soft error protection by forming an epitaxial layer with a graded dopant concentration. By grading a dopant concentration, starting from a first dopant concentration and ending with a second dopant concentration at the device layer, usually determined by the characteristics of the device to be built in the device layer, a constant electric field (?-field) results from the changing dopant concentration. The creation of this ?-field influences the stray, unwanted charges (or transient charges) away from critical device components. Charges that are created in the epitaxial layer are sweep downward, toward, and sometimes into, the substrate where they are absorbed, thus unable to cause a soft error in the device.

Abstract: The present invention is directed to a built-in solution for soft error protection by forming an epitaxial layer with a graded dopant concentration. By grading a dopant concentration, starting from a first dopant concentration and ending with a second dopant concentration at the device layer, usually determined by the characteristics of the device to be built in the device layer, a constant electric field (&egr;-field) results from the changing dopant concentration. The creation of this &egr;-field influences the stray, unwanted charges (or transient charges) away from critical device components. Charges that are created in the epitaxial layer are sweep downward, toward, and sometimes into, the substrate where they are absorbed, thus unable to cause a soft error in the device.

Abstract: Disclosed is a system and method for handling post epitaxial thermal oxidation. The method produces semiconductor wafers by performing the steps of forming a wafer substrate, depositing an epilayer on the substrate, oxidizing a top portion of the epilayer, and removing the oxidized top portion. As a result, the wafer's surface is very smooth, with little or no micro-steps thereon.

Abstract: The present invention provides a system and method for calibrating pressure sensors associated with chambers in a processing facility. The system calibrates the pressure sensors while the chamber are open to each other, such as through an open slit valve or vacuum sealed door. Maintaining the pressure in the chambers relative to each other prevents a rush of gases, condensate or other foreign materials into an adjacent chamber that may occur when the pressure between the chambers is not equalized. This prevents contamination of the materials being processed, and eliminates the need for system shutdown to calibrate sensors. Also, since calibration occurs every time the slit valve is open, the calibration is real-time and does not allow the pressure differential between the chambers to become too great.

Abstract: The present invention provides a system and method for calibrating pressure sensors associated with chambers in a processing facility. The system calibrates the pressure sensors while the chamber are open to each other, such as through an open slit valve or vacuum sealed door. Maintaining the pressure in the chambers relative to each other prevents a rush of gases, condensate or other foreign materials into an adjacent chamber that may occur when the pressure between the chambers is not equalized. This prevents contamination of the materials being processed, and eliminates the need for system shut-down to calibrate sensors. Also, since calibration occurs every time the slit valve is open, the calibration is real-time and does not allow the pressure differential between the chambers to become too great.