Abstract: A method for reducing microsteps on an epitaxial layer deposited on a polished semiconductor wafer substrate by post-epitaxial thermal oxidation. The method produces very smooth semiconductor wafers by performing the steps of depositing an epitaxial layer on a wafer substrate, oxidizing a top portion of the expitaxial layer, and removing the oxidized top portion. As a result, the wafer's surface presents little or no microsteps thereon.

Abstract: Disclosed is a system and method for handling post epitaxial thermal oxidation. The method produces semiconductor wafers by performing the steps of forming a wafer substrate, depositing an epilayer on the substrate, oxidizing a top portion of the epilayer, and removing the oxidized top portion. As a result, the wafer's surface is very smooth, with little or no micro-steps thereon.

Abstract: A method for reducing microsteps on an epitaxial layer deposited on a polished semiconductor wafer substrate by post-epitaxial thermal oxidation. The method produces very smooth semiconductor wafers by performing the steps of depositing an epitaxial layer on a wafer substrate, oxidizing a top portion of the epitaxial layer, and removing the oxidized top portion. As a result, the wafer's surface presents little or no microsteps thereon.

Abstract: A system and method for monitoring a process flow of a semiconductor wafer. In one embodiment, the method initially calculates a first location of the wafer before it is processed. The wafer is then moved into a process chamber where it is processed. Then a second location of the wafer is calculated before the wafer is unloaded. If the difference between the first and second locations are within a predetermined amount, the wafer is unloaded and regular processing steps proceed. If the difference is not within the predetermined amount, an alarm is activated and the process is stopped.

Abstract: A system and method for handling post epitaxial thermal oxidation. The method produces semiconductor wafers by performing the steps of forming a wafer substrate, depositing an epilayer on the substrate, oxidizing a top portion of the epilayer, and removing the oxidized top portion. As a result, the wafer's surface is very smooth, with little or no micro-steps thereon.

Abstract: A system and method for monitoring a process flow of a semiconductor wafer. In one embodiment, the method initially calculates a first location of the wafer before it is processed. The wafer is then moved into a process chamber where it is processed. Then a second location of the wafer is calculated before the wafer is unloaded. If the difference between the first and second locations are within a predetermined amount, the wafer is unloaded and regular processing steps proceed. If the difference is not within the predetermined amount, an alarm is activated and the process is stopped.

Abstract: A system and method for using solid-phase water scrub to remove defects from a wafer surface is disclosed. The method includes the steps of placing the wafer proximate to a frozen substrate and moving the wafer relative to the frozen substrate, thereby causing a portion of the frozen substrate to liquefy. As a result, defects are effectively removed from the wafer's surface.