Abstract: A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.

Abstract: Apparatus and methods for power amplifiers that can operate under a wide range of supply voltages are disclosed herein. In certain implementations, a method of adjusting a parameter of a power amplifier is provided. The method includes detecting a value of a supply voltage provided to the power amplifier. The method further includes selecting a first value from a plurality of values for a first parameter of the power amplifier based on the detected value of the supply voltage. The method further includes adjusting the first parameter of the power amplifier to the first value.

Abstract: Disclosed are systems and methods related to reducing intermodulation products in an RF output signal by matching an impedance of the power amplifier to an impedance of the antenna and concurrently blocking signals having a second fundamental frequency received by the antenna when the antenna is transmitting to inhibit intermodulation products of the first and second fundamental frequencies from re-radiating from the antenna. The matching and blocking are performed concurrently by a single circuit with combined matching and blocking functionality.

Abstract: Disclosed are systems and methods related to reducing intermodulation products in an RF output signal by matching an impedance of the power amplifier to an impedance of the antenna and concurrently blocking signals having a second fundamental frequency received by the antenna when the antenna is transmitting to inhibit intermodulation products of the first and second fundamental frequencies from re-radiating from the antenna. The matching and blocking are performed concurrently by a single circuit with combined matching and blocking functionality.

Abstract: Apparatus and methods for orienting power amplifiers are disclosed herein. In certain implementations, a method of determining the physical orientation of power amplifiers laid out on a printed circuit board (PCB) is provided. The method includes determining an amount of emissions radiated by a first power amplifier die that is positioned in a first orientation on the PCB. The method further includes determining an amount of emissions radiated by a second power amplifier die that is positioned in a second orientation on the PCB. The method further includes determining a third orientation of the second power amplifier die different than the second orientation, such that when the second power amplifier die is in the third orientation, the amount of emissions radiated by the first power amplifier die and the amount of emissions radiated by the second power amplifier die are distributed in different directions.

Abstract: A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.

Abstract: Disclosed are systems and methods related to reducing intermodulation products in an RF output signal by matching an impedance of the power amplifier to an impedance of the antenna and concurrently blocking signals having a second fundamental frequency received by the antenna when the antenna is transmitting to inhibit intermodulation products of the first and second fundamental frequencies from re-radiating from the antenna. The matching and blocking are performed concurrently by a single circuit with combined matching and blocking functionality.

Abstract: A method to improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A bias current for an amplifying transistor of an amplifier circuit is determined based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.

Abstract: A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.

Abstract: Apparatus and methods for orienting power amplifiers are disclosed herein. In certain implementations, a method of determining the physical orientation of power amplifiers laid out on a printed circuit board (PCB) is provided. The method includes determining an amount of emissions radiated by a first power amplifier die that is positioned in a first orientation on the PCB. The method further includes determining an amount of emissions radiated by a second power amplifier die that is positioned in a second orientation on the PCB. The method further includes determining a third orientation of the second power amplifier die different than the second orientation, such that when the second power amplifier die is in the third orientation, the amount of emissions radiated by the first power amplifier die and the amount of emissions radiated by the second power amplifier die are distributed in different directions.

Abstract: Apparatus and methods for power amplifiers that can operate under a wide range of supply voltages are disclosed herein. In certain implementations, a method of adjusting a parameter of a power amplifier is provided. The method includes detecting a value of a supply voltage provided to the power amplifier. The method further includes selecting a first value from a plurality of values for a first parameter of the power amplifier based on the detected value of the supply voltage. The method further includes adjusting the first parameter of the power amplifier to the first value.

Abstract: A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A control circuit determines a bias current for an amplifying transistor of an amplifier circuit based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.

Abstract: A flip-chip integrated circuit die includes a front side including active circuitry formed therein and a plurality of bond pads in electrical communication with the active circuitry, at least two through-wafer vias extending at least partially though the die and having portions at a rear side of the die, and a bond wire external to the die and electrically coupling the portions of the at least two through-wafer vias at the rear side of the die.

Abstract: Apparatus and methods for power amplifiers that can operate under a wide range of supply voltages are disclosed herein. In certain implementations, a method of adjusting a parameter of a power amplifier is provided. The method includes detecting a value of a supply voltage provided to the power amplifier. The method further includes selecting a first value from a plurality of values for a first parameter of the power amplifier based on the detected value of the supply voltage. The method further includes adjusting the first parameter of the power amplifier to the first value.

Abstract: A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.

Abstract: Low cost semiconductor manufacturing techniques have provided consumers with a wide range of electronic devices supporting communications according to multiple standards. These electronic devices will be deployed within many operational jurisdictions, particularly with roaming features, such as Japan, Europe, Asia-Pacific, South America and North America. However, operational compliance requirements can vary substantially with these different jurisdictions. Current electronic devices are designed, manufactured, calibrated and operated according to a specification providing compliance with broad range of operational jurisdictions despite the performance limitations this applies in many of the operational jurisdictions. Accordingly, there is provided a method of dynamically configuring the electronic device based upon a geographically based determination of the operational jurisdiction from global navigation systems data received by the electronic device.

Abstract: Disclosed are systems and methods related to matching an impedance of the power amplifier to an impedance of the antenna in a power amplifier module that includes an amplifier circuit residing on a first semiconductor die and an output matching network (OMN) that includes a first partial OMN and a second partial OMN. The first partial OMN resides on the first semiconductor die and matches an output impedance of the amplifier circuit to an input impedance of the second partial OMN. The second partial OMN matches an output impedance of the first partial OMN with an input impedance of the antenna and is not part of the first semiconductor die.

Abstract: Apparatus and methods for orienting power amplifiers are disclosed herein. In certain implementations, a power amplifier system is provided. The power amplifier system includes a first power amplifier die that is positioned in a first position on a printed circuit board (PCB) and configured to radiate a first amount of emissions. The power amplifier system further includes a second power amplifier die that is positioned in a second orientation on the PCB and configured to radiate a second amount of emissions. The power amplifier system further includes a third power amplifier die that is positioned in a third orientation on the PCB and configured to radiate a third amount of emissions, the third power amplifier die oriented such that the first amount of emissions, the second amount of emissions, and the third amount of emissions in a first direction are less than a threshold value.

Abstract: A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing and fixed matching conditions receives a power level and an indicator of amplifier operation. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. A controller generates a control signal based at least in part on the power level and the indicator to control at least one of the bias current and the matching conditions of matching circuits. The matching conditions and bias current for channels at an edge of a channel band are different from the bias current and matching conditions for channels nearer a center of the channel band.

Abstract: A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A control circuit determines a bias current for an amplifying transistor of an amplifier circuit based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.