Abstract: An electrode for a battery is augmented with vertically aligned carbon nanotubes, allowing both improved storage density of lithium ions and the increase electrical and thermal conductivity. Carbon nanotubes are extremely good electrical and thermal conductors, and can be grown directly on the electrode (e.g., anode or cathode) current collector metals, allowing direct electrical contact. Additionally carbon nanotubes have an ideal aspect ratio, having lengths potentially thousands of times as long as their widths, 10 to 1,000 nanometers. In an embodiment, the carbon nanotube electrode (e.g., an anode) comprises a silicon matrix, allowing withstanding volumetric changes exhibited during cycling of the electrochemical cell. In an embodiment, the carbon nanotube electrode (e.g., a cathode) comprises embedded sulfur, allowing both the improved retention of elemental sulfur and increase electrical conductivity.

Abstract: An electrode for a battery is augmented with vertically aligned carbon nanotubes, allowing both improved storage density of lithium ions and the increase electrical and thermal conductivity. Carbon nanotubes are extremely good electrical and thermal conductors, and can be grown directly on the electrode (e.g., anode or cathode) current collector metals, allowing direct electrical contact. Additionally carbon nanotubes have an ideal aspect ratio, having lengths potentially thousands of times as long as their widths, 10 to 1,000 nanometers. In an embodiment, the carbon nanotube electrode (e.g., a cathode) comprises embedded elemental sulfur, allowing both the improved retention of elemental sulfur and increase electrical conductivity. The surface of carbon nanotubes are nearly chemically identical to carbon, binding the sulfur atoms to the carbon nanotubes, preventing the “loss” of sulfur with the formation of LiS intermediate products.

Abstract: A variable high frequency rf bias is applied to a substrate during a high density plasma CVD process for filling gaps in integrated circuits with low dielectric material. The rf bias is varied by applying it as a pulse or by tailoring the magnitude of the rf bias. Preferably, a gasified organic precursor compound comprising silicon, oxygen and carbon atoms is flowed into the plasma CVD reaction chamber. Preferably, no reactive oxygen gas is used in the reaction chamber.

Abstract: An organic precursor compound is gasified and fed into the reaction chamber of a high density plasma chemical vapor deposition (HDP-CVD) reactor. The organic precursor comprises silicon, oxygen and carbon atoms. No reactive oxygen gas or other oxidizer is used in the reaction chamber. A thin film of carbon-containing low dielectric constant silicon oxide material is deposited and simultaneously etched in the reaction chamber to fill a gap having a high aspect ratio with low dielectric constant insulator material.