Patents by Inventor Dariush Fathy

Dariush Fathy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium
    Patent number: 4920076
    Abstract: A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.
    Type: Grant
    Filed: April 15, 1988
    Date of Patent: April 24, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Orin W. Holland, Dariush Fathy, Clark W. White