Abstract: An apparatus for depositing materials on a substrate includes a manifold having a plurality of inlet valves located equidistantly from the manifold outlet. Preferably the inlet valves are mounted in radial configuration to minimize any "dead space" between the valves and the manifold outlet. The manifold connects a plurality of gas sources through its inlets to a process chamber at its outlet. The valves within the manifold switch continuous reactive gas flows from the sources back and forth between the process chamber and a vent chamber during the deposition process. A purging gas flow is also provided at each valve to purge the "dead space" within the manifold of reactive gases that can linger once the reactive gas flow has been switched to the vent. The method employed by the apparatus maintains a predetermined constant gas flow through the process chamber to produce uniform deposition on the substrate.