Abstract: A showerhead apparatus for a linear batch CVD system includes a movable showerhead, one or more gas supply conduits, and a translation mechanism. Each gas supply conduit provides a precursor gas to the showerhead. The showerhead includes conduits and channels arranged along the length of the showerhead to distribute precursor gas to the surfaces of substrates. The small distance between the substrates and the showerhead limits precursor gas flows from the channels to a small portion of each substrate beneath the showerhead. During a deposition process run, the translation mechanism causes the showerhead to move back and forth over the substrates along a direction perpendicular to a linear arrangement of the substrates. Parasitic deposition within the deposition chamber is substantially reduced in comparison to conventional showerhead apparatus. The ability to accurately control the precursor gas flows and the motion of the showerhead allows for improved thickness uniformity and device yield.

Abstract: Described is a parallel batch CVD system that includes a pair of linear deposition chambers in a parallel arrangement and a robotic loading module disposed between the chambers. Each chamber includes a linear arrangement of substrate receptacles, gas injectors to supply at least one gas in a uniform distribution across the substrates, and a heating module for uniformly controlling a temperature of the substrates. The robotic loading module is configured for movement in a direction parallel to a length of each of the chambers and includes at least one cassette for carrying substrates to be loaded into the substrate receptacles of the chambers. The parallel batch CVD system is suitable for high volume processing of substrates. The CVD processes performed in the chambers can be the same process. Alternatively, the CVD processes may be different and substrates processed in one chamber may be subsequently processed in the other chamber.

Abstract: A showerhead apparatus for a linear batch CVD system includes a movable showerhead, one or more gas supply conduits, and a translation mechanism. Each gas supply conduit provides a precursor gas to the showerhead. The showerhead includes conduits and channels arranged along the length of the showerhead to distribute precursor gas to the surfaces of substrates. The small distance between the substrates and the showerhead limits precursor gas flows from the channels to a small portion of each substrate beneath the showerhead. During a deposition process run, the translation mechanism causes the showerhead to move back and forth over the substrates along a direction perpendicular to a linear arrangement of the substrates. Parasitic deposition within the deposition chamber is substantially reduced in comparison to conventional showerhead apparatus. The ability to accurately control the precursor gas flows and the motion of the showerhead allows for improved thickness uniformity and device yield.

Abstract: Described are a device and a method for cooling a web in a vacuum processing system. The device includes a heat transfer module, a coolant path and a gas injector. The heat transfer module has a first end, a second end opposite the first end, and a pair of cooling surfaces extending between the first and second ends. The first end receives a transported web in a vacuum environment and the second provides the transported web after passage through a web transport path between the cooling surfaces. The coolant path is in thermal communication with the heat transfer module to maintain the cooling surfaces at a temperature less than the temperature of the transported web. The gas injector supplies gas to the web transport path between the cooling surfaces so that heat is efficiently conducted from the transported web to the cooling surfaces.

Abstract: Described is a parallel batch CVD system that includes a pair of linear deposition chambers in a parallel arrangement and a robotic loading module disposed between the chambers. Each chamber includes a linear arrangement of substrate receptacles, gas injectors to supply at least one gas in a uniform distribution across the substrates, and a heating module for uniformly controlling a temperature of the substrates. The robotic loading module is configured for movement in a direction parallel to a length of each of the chambers and includes at least one cassette for carrying substrates to be loaded into the substrate receptacles of the chambers. The parallel batch CVD system is suitable for high volume processing of substrates. The CVD processes performed in the chambers can be the same process. Alternatively, the CVD processes may be different and substrates processed in one chamber may be subsequently processed in the other chamber.

Abstract: Described are an apparatus and a method for cooling a web. The apparatus includes an inner cylinder having a void therein and configured for coupling to a gas source. The apparatus also includes an outer cylinder having an inner surface, an outer surface to support a web and apertures between the inner and outer surfaces. The outer cylinder rotates about the inner cylinder so that gas provided to the void of the inner cylinder flows through the apertures that are adjacent to the void and passes to the outer surface of the outer cylinder to increase the heat transfer between the web and the outer cylinder. The volume of gas introduced into the vacuum deposition chamber during a process run is thereby limited. Advantageously, the apparatus enables higher deposition rates and increased productivity.

Abstract: Described are an apparatus and a method for cooling a web. The apparatus includes an inner cylinder having a void therein and configured for coupling to a gas source. The apparatus also includes an outer cylinder having an inner surface, an outer surface to support a web and apertures between the inner and outer surfaces. The outer cylinder rotates about the inner cylinder so that gas provided to the void of the inner cylinder flows through the apertures that are adjacent to the void and passes to the outer surface of the outer cylinder to increase the heat transfer between the web and the outer cylinder. The volume of gas introduced into the vacuum deposition chamber during a process run is thereby limited. Advantageously, the apparatus enables higher deposition rates and increased productivity.

Abstract: An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and a stationary lower plate. An intermediate indexing plate is rotatively arranged between the upper platen and the lower plate. At least one wafer support pin is attached to the indexing plate for the support of a wafer by the indexing plate. An upper housing is arranged on the upper platen and an outer lower housing is arranged on the lower plate. A displacable lower isolation chamber is disposed within the outer lower housing, being displacable against the indexing plate to define a treatment module between the upper housing and the lower isolation chamber in which the wafer is treated. A wafer supporting treatment plate is arranged within the lower isolation chamber, for controlled rapid treatment of a wafer within the treatment module.

Abstract: An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and a stationary lower plate. An intermediate indexing plate is rotatively arranged between the upper platen and the lower plate. At least one wafer support pin is attached to the indexing plate for the support of a wafer by the indexing plate. An upper housing is arranged on the upper platen and an outer lower housing is arranged on the lower plate. A displacable lower isolation chamber is disposed within the outer lower housing, being displacable against the indexing plate to define a treatment module between the upper housing and the lower isolation chamber in which the wafer is treated. A wafer supporting treatment plate is arranged within the lower isolation chamber, for controlled rapid treatment of a wafer within the treatment module.

Abstract: An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and a stationary lower plate. An intermediate indexing plate is rotatively arranged between the upper platen and the lower plate. At least one wafer support pin is attached to the indexing plate for the support of a wafer by the indexing plate. An upper housing is arranged on the upper platen and an outer lower housing is arranged on the lower plate. A displacable lower isolation chamber is disposed within the outer lower housing, being displacable against the indexing plate to define a treatment module between the upper housing and the lower isolation chamber in which the wafer is treated. A wafer supporting treatment plate is arranged within the lower isolation chamber, for controlled rapid treatment of a wafer within the treatment module.

Abstract: An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and a stationary lower plate. An intermediate indexing plate is rotatively arranged between the upper platen and the lower plate. At least one wafer support pin is attached to the indexing plate for the support of a wafer by the indexing plate. An upper housing is arranged on the upper platen and an outer lower housing is arranged on the lower plate. A displacable lower isolation chamber is disposed within the outer lower housing, being displacable against the indexing plate to define a treatment module between the upper housing and the lower isolation chamber in which the wafer is treated. A wafer supporting treatment plate is arranged within the lower isolation chamber, for controlled rapid treatment of a wafer within the treatment module.