Abstract: A thermoelectric device and method based on creating a structure of nanoclusters in a composite metal and insulator material by co-depositing the metal and insulator material and irradiating the composite material to create nanoclusters of metal within the composite material. In one variation, the composite material may be continuously deposited and concurrently irradiated. A further variation based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure.

Abstract: A thermoelectric device and method based on creating a structure of nanoclusters in a composite metal and insulator material by co-depositing the metal and insulator material and irradiating the composite material to create nanoclusters of metal within the composite material. In one variation, the composite material may be continuously deposited and concurrently irradiated. A further variation based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure.

Abstract: A thermoelectric device based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure. In another embodiment, layers are irradiated sequentially during fabrication using low energy radiation.

Abstract: A thermoelectric device based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure. In another embodiment, layers are irradiated sequentially during fabrication using low energy radiation.

Abstract: A high efficiency thermo electric device and associated method of making, the device comprising a multilayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanoclusters of the metal material in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

Abstract: A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

Abstract: A system of the present disclosure has a particle source that generates an ion beam and a vacuum chamber that houses a polymer film. The particle source bombards the polymer film with the ion beam. The system further has a controller that controls the particle source based upon an amount of the gas detected within the vacuum chamber.

Abstract: A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.