Patents by Inventor Daty M. Rogers

Daty M. Rogers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Antireflective structure and method
    Patent number: 6930028
    Abstract: The present invention provides integrated circuit fabrication with a silicon oxynitride antireflective layer for gate location plus patterned photoresist linewidth reduction for gate length definition followed by interconnect definition without patterned photoresist linewidth reduction. This has the advantages of an antireflective layer compatible with linewidth reduction and polysilicon etching.
    Type: Grant
    Filed: June 5, 1998
    Date of Patent: August 16, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Maureen A. Hanratty, Daty M. Rogers, Qizhi He, Wei William Lee
  • In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning
    Patent number: 6797633
    Abstract: After via etch, a low-k dielectric layer (104) is treated with an in-situ O2 plasma. Resist poisoning is caused by a N source that causes an interaction between low-k films (104), such as OSG, and DUV resist (130, 132). The in-situ plasma treatment immediately removes the source of poisoning to reduce or eliminate poisoning at trench patterning.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: September 28, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Ping Jiang, Robert Kraft, Kenneth J. Newton, Daty M. Rogers
  • In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning
    Publication number: 20020081855
    Abstract: After via etch, a low-k dielectric layer (104) is treated with an in-situ O2 plasma. Resist poisoning is caused by a N source that causes an interaction between low-k films (104), such as OSG, and DUV resist (130, 132). The in-situ plasma treatment immediately removes the source of poisoning to reduce or eliminate poisoning at trench patterning.
    Type: Application
    Filed: September 28, 2001
    Publication date: June 27, 2002
    Inventors: Ping Jiang, Robert Kraft, Kenneth J. Newton, Daty M. Rogers