Abstract: A method is described that involves, for a first read of information from a memory, activating termination loads on a memory controller's side of a data bus between a memory controller and a memory. The method also involves, for a write of information into the memory, deactivating the termination loads. The method also involves, for a second read of information from the memory, activating the termination loads.

Abstract: A method is described that involves, for a first read of information from a memory, activating termination loads on a memory controller's side of a data bus between a memory controller and a memory. The method also involves, for a write of information into the memory, deactivating the termination loads. The method also involves, for a second read of information from the memory, activating the termination loads.

Abstract: The present invention discloses a method and apparatus for interfacing a memory array to a memory controller using a field-effect transistor (FET) switch. The memory controller has a bus which comprises a plurality of signal lines. The memory array is coupled to the memory controller. The memory array is divided into N groups of memory devices; each group has K memory devices. K memory devices in each of the N groups share memory signal lines. The FET switch couples the bus to one of the N groups of the shared memory signal lines at different times in response to a switch control indication.