Abstract: A fluid separation conduit cartridge that is operative to encrypt, decrypt, transmit and receive information is disclosed. The conduit cartridge encrypts information sent to an analytical system or an operating facility in communication with the conduit cartridge and can decrypt encrypted information received from an analytical system or an operating facility in communication with the conduit cartridge.

Abstract: A novel microfluidic substrate assembly and method for making same are disclosed. The substrate assembly comprises a multi-layer laminated substrate defining at least one fluid inlet port and at least one microscale fluid flow channel within the multi-layer substrate in fluid communication with the inlet port for transport of fluid. The substrate assembly may optionally comprise additional components and elements located within the substrate assembly or attached to the substrate assembly.

Abstract: A fluid separation conduit cartridge comprising a fluid separation conduit is disclosed. In certain embodiments the fluid separation conduit is potted to provide operation at increased pressures. In other embodiments, the fluid separation conduit cartridge has one or more memory units. The memory units are operative to store data such as, for example, cartridge usage and test results.

Abstract: An NMR system comprises an NMR probe comprising multiple NMR detection sites. Each of the multiple NMR detection sites comprises a sample holding void and an associated NMR microcoil. The NMR system further comprises a controllable fluid router operative to direct fluid sample to the multiple NMR detection sites.

Abstract: A conveyor oven has two insulated cabinets, each cabinet having two plenums for conducting heated air toward a printing plate that rests on a conveyor. The two plenums in each cabinet face each other and are substantially identical. Each plenum has a supply and return duct assembly located above the conveyor, and is supplied by a fan and heater arrangement located below and underneath the conveyor. An insulated intermediate chamber is disposed between the exit of the first upstream cabinet and the second, downstream cabinet. With this arrangement, the conveyor carries a printing plate through the first cabinet, where the plate is heated, then through the intermediate insulated chamber, where it is maintained at a heated temperature, and then into the second cabinet where it is again heated. It is then conveyed out of the second cabinet and out of the oven by the conveyor.

Abstract: An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.

Abstract: The present invention comprises a method and system for peer to peer input output. The present invention is implemented on a computer system having a microprocessor and a packet switched router coupled to the microprocessor. The peer to peer input output system of the present invention defines a data source corresponding to a first device coupled to the computer system. The system then defines a data sink corresponding to a second device coupled to said computer system. The packet switch router is subsequently used to logically implement a data pipe between the data source and the data sink. The system configures the data pipe to provide adequate bandwidth between the data source and the data sink such that a data transfer occurs smoothly and predictably. The data transfer is performed via the data pipe such that the data transfer proceeds independently of any simultaneous second data transfer in the packet switched router.

Abstract: A conveyor oven is capable of heating precisely and uniformly an article to be baked as the article is conveyed through the oven at a designated speed. Precise and uniform heating is promoted by 1) a combination supply/return duct assembly positioned above the conveyor and configured to promote uniform airflow towards the upper surface of the conveyor, and 2) discharge orifices configured to further promote uniform airflow from the supply ducts without generating whistling or other unpleasant noises. The arrangement of this supply/return duct assembly, incorporating both supply and return ducts in the same plane, also promotes a low profile oven--an important consideration in applications in which minimizing space is a priority. The profile of the oven is reduced further by placing the heating element beneath the conveyor and by configuring supply and return passages to circulate air between the heat source and the supply/return duct assembly using minimal space.

Abstract: The present invention comprises a method and system for implementing prioritized communications in a computer system. The present invention is implemented on a computer system having a microprocessor and a plurality of peripheral devices coupled to the computer system. The system of the present invention determines a first priority level and determines a second priority level. The system of the present invention receives a bandwidth allocation request from a software process to transfer data at the first priority level between two or more peripheral devices. The system subsequently allocates a first priority data transfer bandwidth between the devices in response to the request and performs a first data transfer between the devices using the first priority data transfer bandwidth. In addition, the system of the present invention performs a second data transfer between other devices using a second priority data transfer bandwidth. The second data transfer occurs at a second priority level.

Abstract: A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a volume of memory material which is a transition metal modified chalcogen. The transition metal may be selected from the group consisting of Nb, Pd, Pt and mixtures or alloys thereof. The memory material may further include at least one transition metal selected from the group consisting of Fe, Cr, Ni and mixtures or alloys thereof. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the single cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and increased write/erase cycle life. The structurally modified memory element includes an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon layer. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory elements of the instant invention are further characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energies.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

Abstract: An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.