Abstract: The present disclosure relates to systems and methods that can be used to stimulate and record responses elicited from a naturally-occurring or artificially-introduced light-sensitive molecule. In certain non-limiting embodiments, a system of the presently disclosed subject matter includes (a) a digital spectral integrator, e.g., light source, (b) a detection means and (c) an integration means.

Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.

Abstract: A method of utilizing a divided pressure vessel in a processing system employing a carbon dioxide based solvent includes transferring a first carbon dioxide based treating solution from a first liquid chamber in a divided pressure vessel having a plurality of liquid chambers to a processing vessel, returning the first treating solution from the processing vessel to the divided pressure vessel, transferring a second carbon dioxide based treating solution having a composition different from the first treating solution from a second liquid chamber in the divided pressure vessel to a processing vessel, and returning the second treating solution from the processing vessel to the divided pressure vessel. A divided pressure vessel may allow multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel while maintaining the different chemical compositions of the multiple solvent baths.

Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.

Abstract: An apparatus for cleaning a microelectronic substrate includes a pressure chamber, a supply of a process liquid including dense phase CO2 fluidly connected to the chamber and a distilling system. Distilling system includes a still fluidly connected to the chamber and operative to separate CO2 from the process fluid. The distilling system is operative to re-introduce the separated CO2 into the chamber or a further chamber.

Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: A method of cleaning and removing water, entrained solutes and particulate matter during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the cleaning composition comprising carbon dioxide and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide drying composition, and subjecting the densified carbon dioxide drying composition to cyclical phase modulation during at least a portion of the immersing step to thereby facilitating cleaning; and then (d) removing the cleaning composition from the surface portion.

Abstract: According to method embodiments of the present invention, a method for cleaning a microelectronic substrate includes placing the substrate in a pressure chamber. A process fluid including dense phase CO2 is circulated through the chamber such that the process fluid contacts the substrate. The phase of the CO2 is cyclically modulated during at least a portion of the step of circulating the process fluid.

Abstract: A method of cleaning and removing water, entrained solutes and particulate matter during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the cleaning composition comprising carbon dioxide and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide drying composition, and subjecting the densified carbon dioxide drying composition to cyclical phase modulation during at least a portion of the immersing step to thereby facilitating cleaning; and then (d) removing the cleaning composition from the surface portion.