Abstract: The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 5 wt-% of an a hydroxyl amine compound, (ii) between about 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.

Abstract: The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of one or more of a complexing agent or a passivating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 7 wt-% of one or more a complexing agent or a passivating agent, (ii) between about 0 and 5 wt-% of a surfactant, (iii) between about 0.

Abstract: Supported polycrystalline compacts having improved shear strength, impact, and fracture toughness properties, and methods for making the same under high temperature/high pressure (HT/HP) processing conditions. The method involves a HT/HP apparatus formed of a generally cylindrical reaction cell assembly having an inner chamber of predefined axial and radial extents and containing pressure transmitting medium, and a charge assembly having axial and radial surfaces and formed of at least one sub-assembly comprising a mass of crystalline particles adjacent a metal carbide support layer. The charge assembly is disposed within the chamber of the reaction cell assembly, with the pressure transmitting medium being interposed between the axial and radial surfaces of the charge assembly and the extents of the reaction cell chamber to define an axial pressure transmitting medium thickness, L.sub.h, and a radial pressure transmitting medium thickness, L.sub.r, the ratio of which, L.sub.h /L.sub.