Abstract: A method of forming an infrared detector includes defining an optical window in a cover substrate. Defining the optical window includes forming a multilayer interference filter or a periodic diffraction grating on an upper surface of the optical window and a periodic diffraction grating on the lower surface of the optical window. The method also includes performing anodic bonding of a spacer onto the cover substrate, transferring the cover substrate provided onto a base substrate, and hermetically bonding the spacer onto the base substrate.

Abstract: A hermetic housing is disclosed (10a) for an optoelectronic component (11) or a MEMS device configured to form an enclosure (12) within which a low pressure or vacuum prevails. The hermetic housing includes: an optical window (14) transparent for at least one wavelength of interest (?); and a layer of a getter material (15a) configured to capture gases present in said enclosure and deposited on the optical window opposite the enclosure. This layer of getter material has a thickness (e_t), greater than 60 nanometers, and a porosity (P) in the range from 10 to 70% to satisfy the following relation: (1?P)*e_t<?/2?k with ? corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.

Abstract: A hermetic housing is disclosed (10a) for an optoelectronic component (11) or a MEMS device configured to form an enclosure (12) within which a low pressure or vacuum prevails. The hermetic housing includes: an optical window (14) transparent for at least one wavelength of interest (?); and a layer of a getter material (15a) configured to capture gases present in said enclosure and deposited on the optical window opposite the enclosure. This layer of getter material has a thickness (e_t), greater than 60 nanometers, and a porosity (P) in the range from 10 to 70% to satisfy the following relation: (1?P)*e_t<?/2?k with ? corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.

Abstract: The invention concerns a hermetically sealed package forming a low pressure or vacuum enclosure, and receiving at least one component of imaging bolometer type. The hermetically sealed package includes a monolithic layer of a getter material capable of capturing gases present in the enclosure, the layer of getter material having a thickness in the range from 20 nanometers to 200 nanometers.

Abstract: A device having a microelectronic component housed in a hermetically sealed housing having a vacuum inner space, and including a getter that substantially traps only hydrogen, is inert to oxygen and/or to nitrogen, and is housed in said inner space. Each of the constituent parts of the device being likely to degas into the inner space is a mineral material.

Abstract: A device having a microelectronic component housed in a hermetically sealed housing having a vacuum inner space, and including a getter that substantially traps only hydrogen, is inert to oxygen and/or to nitrogen, and is housed in said inner space. Each of the constituent parts of the device being likely to degas into the inner space is a mineral material.

Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion. Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.

Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion. Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.