Patents by Inventor David C. Cosman

David C. Cosman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4184909
    Abstract: A method for forming thin film interconnection patterns atop substrates, particularly semiconductor substrates. It features the use of the passivation layer itself, typically glass, as a stable masking material to etch the conductive lines. Conversely, the metal conductor is used as a stable mask in etching the glass to form via holes. The process provides a practical resist system which is compatible with reactive ion etching or other dry etching process.
    Type: Grant
    Filed: August 21, 1978
    Date of Patent: January 22, 1980
    Assignee: International Business Machines Corporation
    Inventors: Kenneth Chang, David C. Cosman, Helmut M. Gartner, Anthony J. Hoeg, Jr.