Abstract: Commercial metalized plastic film, in the form of discarded containers or container stock, is collected, cleaned, shredded and packaged, to produce an insulating layer having a high thermal resistance, or R-value, no outgassing of volatile compounds at habitable temperatures, and multiple reusability after deployment. Each step in the sequence is designed to minimize unit cost of the process, as well as maximize the thermal resistance of the finished product. The invention largely avoids disintegration of the recycled material, and hence utilizes the embedded energy already present in the construction of the original film.

Abstract: Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.