Patents by Inventor David C. Pender

David C. Pender has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sintered polycrystalline gallium nitride and its production
    Patent number: 6861130
    Abstract: Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: March 1, 2005
    Assignee: General Electric Company
    Inventors: Mark P. D'Evelyn, David C. Pender, Suresh S. Vagarali, Dong-Sil Park
  • Sintered polycrystalline gallium nitride and its production
    Publication number: 20030086856
    Abstract: Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.
    Type: Application
    Filed: November 2, 2001
    Publication date: May 8, 2003
    Inventors: Mark P. D'Evelyn, David C. Pender, Suresh S. Vagarali, Dong-Sil Park