Abstract: Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

Abstract: Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

Abstract: Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

Abstract: A photon-counting Geiger-mode avalanche photodiode intensity imaging array includes an array of pixels, each having an avalanche photodiode. A pixel senses an avalanche event and stores, in response to the sensed avalanche event, a single bit digital value therein. An array of accumulators are provided such that each accumulator is associated with a pixel. A row decoder circuit addresses a pixel row within the array of pixels. A bit sensing circuit converts a precharged capacitance into a digital value during read operations.

Abstract: Optical imaging systems and methods use polarized illumination and a coordinated pupil filter to achieve high contrast. An imaging system includes a light source to generate light for illuminating an object having features aligned in a first direction and features aligned in a second direction, a lens for imaging the illuminated object onto a surface, a spatial selection device, such as a pupil filter, selective in a first mode of light corresponding to features of the illuminated object aligned in the first direction and selective in a second mode of light corresponding to features of the illuminated object aligned in a second direction, a polarization device optically coupled to the spatial selection device and selective in the first mode of s-polarized light corresponding to the first direction and selective in the second mode of s-polarized light corresponding to the second direction, and a controller for selecting operation in the first mode or in the second mode.

Abstract: Optical imaging systems and methods use polarized illumination and a coordinated pupil filter to achieve high contrast. An imaging system includes a light source to generate light for illuminating an object having features aligned in a first direction and features aligned in a second direction, a lens for imaging the illuminated object onto a surface, a spatial selection device, such as a pupil filter, selective in a first mode of light corresponding to features of the illuminated object aligned in the first direction and selective in a second mode of light corresponding to features of the illuminated object aligned in a second direction, a polarization device optically coupled to the spatial selection device and selective in the first mode of s-polarized light corresponding to the first direction and selective in the second mode of s-polarized light corresponding to the second direction, and a controller for selecting operation in the first mode or in the second mode.

Abstract: A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.

Abstract: An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.

Abstract: Ordered liquids, or mesophases, are aligned by forming a structure on a substrate surface using a planar process of formation, the surface structure having a predetermined pattern, and applying a mesophase to the surface to substantially orient the molecules of the mesophase in accordance with the predetermined pattern. A liquid crystal display device can be made in which, in a preferred embodiment, the liquid crystal is confined between two substrates having oppositely disposed surfaces on which selected patterns of surface structures have been formed. The surface structures can be grating structures made of a conductive material, such as metal, which structures act to align the liquid crystal in accordance with the selected patterns, to polarize light passing through the surface structures, and to provide electrical contacts so that an electric signal applied thereto can produce an electric field in the region between the substrate surface structures.

Abstract: Ordered liquids, or mesophases, are aligned by forming a structure on a substrate surface using a planar process of formation, the surface structure having a predetermined pattern, and applying a mesophase to the surface to substantially orient the molecules of the mesophase in accordance with the predetermined pattern. A liquid crystal display device can be made in which, in a preferred embodiment, the liquid crystal is confined between two substrates having oppositely disposed surfaces on which selected patterns of surface structures have been formed. The surface structures can be grating structures made of a conductive material, such as metal, which structures act to align the liquid crystal in accordance with the selected patterns, to polarize light passing through the surface structures, and to provide electrical contacts so that an electrical signal applied thereto can produce an electric field in the region between the substrate surface structures.