Abstract: A NOx absorber catalyst comprising a substrate monolith coated with one or more washcoat layers and comprising a first component comprising a nitrogen oxide storage component, at least one precious metal and a dispersed rare earth oxide supported on a refractory support material, and a second component comprising a precious metal supported on a bulk reducible oxide that is substantially free of nitrogen oxide storage material, wherein the precious metal present in the second component comprises Pt, Pd or a combination of both Pt and Pd and wherein the bulk reducible oxide is an oxide, a composite oxide or a mixed oxide comprising at least one of manganese, iron, cobalt, copper, tin or cerium.

Abstract: A NOx absorber catalyst comprising a substrate monolith coated with one or more washcoat layers and comprising a first component comprising a nitrogen oxide storage component, at least one precious metal and a dispersed rare earth oxide supported on a refractory support material, and a second component comprising a precious metal supported on a bulk reducible oxide that is substantially free of nitrogen oxide storage material, wherein the precious metal present in the second component comprises Pt, Pd or a combination of both Pt and Pd and wherein the bulk reducible oxide is an oxide, a composite oxide or a mixed oxide comprising at least one of manganese, iron, cobalt, copper, tin or cerium.

Abstract: A first heat-treating method involves monitoring at least one thermal efficiency parameter associated with an irradiance system configured to produce an irradiance flash incident on a surface of a workpiece, and automatically updating control information used by the irradiance system to produce the irradiance flash, in response to the monitoring of the thermal efficiency parameter. A second method involves predicting a heating effect of an irradiance flash to be incident upon a surface of a workpiece, in response to a measurement of a heating parameter of the surface, and pre-adjusting the irradiance flash, in response to the predicted heating effect. A third method involves measuring a temperature of a surface of a workpiece during an initial portion of an irradiance flash incident on the surface, and controlling a power of a remaining portion of the irradiance flash, in response to the temperature.

Abstract: Temperature measurement and heat-treating methods and systems. One method includes identifying a temperature of a first surface of a workpiece, and controlling energy of an irradiance flash incident on the first surface of the workpiece, in response to the temperature of the first surface. Identifying may include identifying the temperature of the first surface during an initial portion of the irradiance flash, and controlling may include controlling the power of a remaining portion of the irradiance flash. The first surface of the workpiece may include a device side of a semiconductor wafer.

Abstract: An apparatus for producing electromagnetic radiation includes a flow generator configured to generate a flow of liquid along an inside surface of an envelope, first and second electrodes configured to generate an electrical arc within the envelope to produce the electromagnetic radiation, and an exhaust chamber extending outwardly beyond one of the electrodes, configured to accommodate a portion of the flow of liquid. In another aspect, the flow generator is electrically insulated. In another aspect, the electrodes are configured to generate an electrical discharge pulse to produce an irradiance flash, and the apparatus includes a removal device configured to remove particulate contamination from the liquid, the particulate contamination being released during the flash and being different than that released by the electrodes during continuous operation.

Abstract: Apparatuses and methods for suppressing thermally induced motion of a workpiece. An apparatus includes a workpiece heating system configured to thermally induce motion of a workpiece, and further includes a damping member spaced apart from the workpiece and configured to apply a damping force to dampen the motion of the workpiece. The damping member may be spaced apart from a rest position of the workpiece by a distance sufficiently small that gas pressure between the damping member and the workpiece opposes the motion of the workpiece. The distance is preferably adjustable.

Abstract: A method involves pre-heating a workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Enhancing cooling may involve absorbing radiation thermally emitted by the workpiece. An apparatus includes a first heating source for heating a first surface of a semiconductor wafer, a second heating source for heating a second surface of the semiconductor wafer, and a first cooled window disposed between the first heating source and the semiconductor wafer.

Abstract: Temperature measurement and heat-treating methods and systems. One method includes measuring a present intensity of radiation thermally emitted from a first surface of a workpiece, and identifying a present temperature of the first surface in response to the present intensity and at least one previous thermal property of the first surface. Preferably, the workpiece includes a semiconductor wafer, and the first and second surfaces respectively include device and substrate sides thereof. The present temperature of the device side is preferably identified while the device side is being irradiated, e.g. by an irradiance flash having a duration less than a thermal conduction time of the wafer. The device side temperature may be identified in response to a previous device side temperature, which may be identified in response to a previous temperature of the substrate side unequal to the previous device side temperature, and a temperature history of the wafer.